Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 94-112 |
| Number of pages | 19 |
| Journal | Journal of Nano Research |
| Volume | 60 |
| DOIs | |
| Publication status | Published - 2019 |
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ZnO Nanowire Field Effect Transistor for Biosensing: A Review. / Ditshego, Nonofo M.J.
In: Journal of Nano Research, Vol. 60, 2019, p. 94-112.Research output: Contribution to journal › Article
TY - JOUR
T1 - ZnO Nanowire Field Effect Transistor for Biosensing: A Review
AU - Ditshego, Nonofo M.J.
PY - 2019
Y1 - 2019
N2 - The last 19 years have seen intense research made on zinc oxide (ZnO) material mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. The review focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalisation achieved by attaching a variety of compounds on the designated sensing area. Reference electrodes and buffers are used as controllers. Top-down fabrication processes are preferred over bottom-up because they pave way for mass production. Different growth techniques are reviewed and discussed. Strengths and weaknesses of the FET and sensor are also reviewed.
AB - The last 19 years have seen intense research made on zinc oxide (ZnO) material mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. The review focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalisation achieved by attaching a variety of compounds on the designated sensing area. Reference electrodes and buffers are used as controllers. Top-down fabrication processes are preferred over bottom-up because they pave way for mass production. Different growth techniques are reviewed and discussed. Strengths and weaknesses of the FET and sensor are also reviewed.
U2 - 10.4028/www.scientific.net/JNanoR.60.94
DO - 10.4028/www.scientific.net/JNanoR.60.94
M3 - Article
VL - 60
SP - 94
EP - 112
JO - Journal of Nano Research
JF - Journal of Nano Research
SN - 1662-5250
ER -