Top-Down Fabrication Process of ZnO NWFETs

Nonofo Ditshego, Suhana M. Sultan

Research output: Contribution to journalArticle

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Abstract

ZnO NWFETs were fabricated with and without Al2O3 passivation. This was done by developing a new recipe for depositing the thin film of ZnO. By using a high donor concentration of 1.7 x 1018 cm-3 for the thin film, contact resistance values were lowered (passivated device had Rcon = 2.5 x 104 Ω; unpassivated device had Rcon = 3.0 x 105 Ω). By depositing Zn first instead of O2, steep subthreshold slopes were obtained. The passivated device had a subthreshold slope of 225mV/decade and the unpassivated device had a slope of 125 mV/decade. Well-behaved
electrical characteristics have been obtained and the passivated device shows field effect mobility of
10.9 cm2/Vs and the un-passivated device shows a value of 31.4 cm2

/Vs. To verify the results, 3D
simulation was also carried out which shows that the obtained values of sub-threshold slope
translate into interface state number densities of -1.86 x 1013 cm-2 for the unpassivated device and 3.35 x 1014 cm-2 for the passivated device. The passivated device is suitable for biosensing
applications.
Original languageEnglish
Pages (from-to)77-92
JournalJournal of Nano Research
Volume57
Publication statusPublished - Apr 2019

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Fabrication
Thin films
fabrication
Interface states
Contact resistance
Passivation
slopes
thin films
contact resistance
passivity
thresholds

Cite this

Ditshego, Nonofo ; Sultan, Suhana M. / Top-Down Fabrication Process of ZnO NWFETs. In: Journal of Nano Research. 2019 ; Vol. 57. pp. 77-92.
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Top-Down Fabrication Process of ZnO NWFETs. / Ditshego, Nonofo; Sultan, Suhana M.

In: Journal of Nano Research, Vol. 57, 04.2019, p. 77-92.

Research output: Contribution to journalArticle

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N2 - ZnO NWFETs were fabricated with and without Al2O3 passivation. This was done by developing a new recipe for depositing the thin film of ZnO. By using a high donor concentration of 1.7 x 1018 cm-3 for the thin film, contact resistance values were lowered (passivated device had Rcon = 2.5 x 104 Ω; unpassivated device had Rcon = 3.0 x 105 Ω). By depositing Zn first instead of O2, steep subthreshold slopes were obtained. The passivated device had a subthreshold slope of 225mV/decade and the unpassivated device had a slope of 125 mV/decade. Well-behavedelectrical characteristics have been obtained and the passivated device shows field effect mobility of10.9 cm2/Vs and the un-passivated device shows a value of 31.4 cm2/Vs. To verify the results, 3Dsimulation was also carried out which shows that the obtained values of sub-threshold slopetranslate into interface state number densities of -1.86 x 1013 cm-2 for the unpassivated device and 3.35 x 1014 cm-2 for the passivated device. The passivated device is suitable for biosensingapplications.

AB - ZnO NWFETs were fabricated with and without Al2O3 passivation. This was done by developing a new recipe for depositing the thin film of ZnO. By using a high donor concentration of 1.7 x 1018 cm-3 for the thin film, contact resistance values were lowered (passivated device had Rcon = 2.5 x 104 Ω; unpassivated device had Rcon = 3.0 x 105 Ω). By depositing Zn first instead of O2, steep subthreshold slopes were obtained. The passivated device had a subthreshold slope of 225mV/decade and the unpassivated device had a slope of 125 mV/decade. Well-behavedelectrical characteristics have been obtained and the passivated device shows field effect mobility of10.9 cm2/Vs and the un-passivated device shows a value of 31.4 cm2/Vs. To verify the results, 3Dsimulation was also carried out which shows that the obtained values of sub-threshold slopetranslate into interface state number densities of -1.86 x 1013 cm-2 for the unpassivated device and 3.35 x 1014 cm-2 for the passivated device. The passivated device is suitable for biosensingapplications.

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