Thermal and compositional defects in chemical spray pyrolysed indium selenide (In2Se3) thin films: Effects on film properties

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Abstract

Polycrystalline In2Se3 semiconducting thin films were synthesized by chemical spray pyrolysis and their properties investigated. Strong dependence of structural and opto-electronic properties on film composition was observed. Absorption coefficient (α) at normal incidence was determined and an optimised direct optical band gap (Eg) of 1.92 eV was obtained at a substrate temperature (Tsub) of 673 K. Whereas low Tsub favoured incorporation of impurities in the films, elevated Tsub had the effects of introducing textural and structural defects with modifications in the film properties. The crystallinity of the films increased with switch from chalcogen rich to chalcogen deficient films.

Original languageEnglish
Pages (from-to)1240-1245
Number of pages6
JournalJournal of Optoelectronics and Advanced Materials
Volume13
Issue number10
Publication statusPublished - Oct 1 2011

Fingerprint

indium selenides
Indium
sprayers
Chalcogens
Thin films
Defects
defects
thin films
Semiconducting films
Spray pyrolysis
Optical band gaps
Electronic properties
pyrolysis
crystallinity
absorptivity
switches
incidence
Switches
Hot Temperature
indium triselenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Polycrystalline In2Se3 semiconducting thin films were synthesized by chemical spray pyrolysis and their properties investigated. Strong dependence of structural and opto-electronic properties on film composition was observed. Absorption coefficient (α) at normal incidence was determined and an optimised direct optical band gap (Eg) of 1.92 eV was obtained at a substrate temperature (Tsub) of 673 K. Whereas low Tsub favoured incorporation of impurities in the films, elevated Tsub had the effects of introducing textural and structural defects with modifications in the film properties. The crystallinity of the films increased with switch from chalcogen rich to chalcogen deficient films.",
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AU - Muiva, Cosmas M.

AU - Sathiaraj, Stephen T.

AU - Mwabora, Julius M.

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N2 - Polycrystalline In2Se3 semiconducting thin films were synthesized by chemical spray pyrolysis and their properties investigated. Strong dependence of structural and opto-electronic properties on film composition was observed. Absorption coefficient (α) at normal incidence was determined and an optimised direct optical band gap (Eg) of 1.92 eV was obtained at a substrate temperature (Tsub) of 673 K. Whereas low Tsub favoured incorporation of impurities in the films, elevated Tsub had the effects of introducing textural and structural defects with modifications in the film properties. The crystallinity of the films increased with switch from chalcogen rich to chalcogen deficient films.

AB - Polycrystalline In2Se3 semiconducting thin films were synthesized by chemical spray pyrolysis and their properties investigated. Strong dependence of structural and opto-electronic properties on film composition was observed. Absorption coefficient (α) at normal incidence was determined and an optimised direct optical band gap (Eg) of 1.92 eV was obtained at a substrate temperature (Tsub) of 673 K. Whereas low Tsub favoured incorporation of impurities in the films, elevated Tsub had the effects of introducing textural and structural defects with modifications in the film properties. The crystallinity of the films increased with switch from chalcogen rich to chalcogen deficient films.

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