Synthesis and characterization of zinc oxide thin films for optoelectronic applications

E. Muchuweni, T. S. Sathiaraj, H. Nyakotyo

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Micro-ring structured zinc oxide (ZnO) thin films were prepared on glass substrates by spray pyrolysis and their structural, morphological, optical and electrical properties were investigated. X-ray Diffraction (XRD) analysis revealed the films’ hexagonal wurtzite phase with a preferred (002) grain orientation. The mean crystallite size calculated on the basis of the Debye-Scherrer model was 24 nm and a small dislocation density of 1.7×10−3  nm−2 was obtained, indicating the existence of few lattice defects and good crystallinity. Scanning Electron Microscopy (SEM) micrographs revealed the film's granular nature composed of rod-shaped and spherical nanoparticles which agglomerated to form micro-ring like film clusters on the film surface. The average transmittance in the visible region, optical band gap and Urbach energy were approximately 75–80%, 3.28 eV and 57 meV, respectively. The refractive index and extinction coefficient were determined using Swanepoel's envelope method. Raman spectroscopy revealed the presence of small amounts of residual tensile stress and low density of defects in the ZnO thin films. This was consistent with XRD analysis. A low sheet resistivity (6.03×101  Ωcm) and high figure of merit (4.35×10−6  Ω−1) were obtained for our films indicating their suitability in optoelectronic applications.

Original languageEnglish
Article numbere00285
Pages (from-to)e00285
JournalHeliyon
Volume3
Issue number4
DOIs
Publication statusPublished - Apr 1 2017

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zinc oxides
synthesis
thin films
rings
defects
tensile stress
diffraction
figure of merit
wurtzite
residual stress
pyrolysis
sprayers
crystallinity
transmittance
extinction
x rays
envelopes
rods
Raman spectroscopy
electrical properties

All Science Journal Classification (ASJC) codes

  • General

Cite this

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abstract = "Micro-ring structured zinc oxide (ZnO) thin films were prepared on glass substrates by spray pyrolysis and their structural, morphological, optical and electrical properties were investigated. X-ray Diffraction (XRD) analysis revealed the films’ hexagonal wurtzite phase with a preferred (002) grain orientation. The mean crystallite size calculated on the basis of the Debye-Scherrer model was 24 nm and a small dislocation density of 1.7×10−3  nm−2 was obtained, indicating the existence of few lattice defects and good crystallinity. Scanning Electron Microscopy (SEM) micrographs revealed the film's granular nature composed of rod-shaped and spherical nanoparticles which agglomerated to form micro-ring like film clusters on the film surface. The average transmittance in the visible region, optical band gap and Urbach energy were approximately 75–80{\%}, 3.28 eV and 57 meV, respectively. The refractive index and extinction coefficient were determined using Swanepoel's envelope method. Raman spectroscopy revealed the presence of small amounts of residual tensile stress and low density of defects in the ZnO thin films. This was consistent with XRD analysis. A low sheet resistivity (6.03×101  Ωcm) and high figure of merit (4.35×10−6  Ω−1) were obtained for our films indicating their suitability in optoelectronic applications.",
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Synthesis and characterization of zinc oxide thin films for optoelectronic applications. / Muchuweni, E.; Sathiaraj, T. S.; Nyakotyo, H.

In: Heliyon, Vol. 3, No. 4, e00285, 01.04.2017, p. e00285.

Research output: Contribution to journalArticle

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