Stoichiometry and local bond configuration of In2S3:Cl thin films by Rutherford backscattering spectrometry

Albert O. Juma

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


In2S3 thin films deposited using chemical methods always contain residual elements from the precursors, which modify their properties. As buffer layers in solar cells, the residual elements in the In2S3 layer affect the performance of these devices. The stoichiometry of In2S3 thin films deposited by spray ion layer gas reaction (ILGAR) was studied as a function of the residual Cl from InCl3 precursor by varying the deposition parameters. The chemical formula was deduced from the elemental composition determined using Rutherford backscattering (RBS). Incomplete sulfurization of the precursor implies that residual Cl remains bonded to the In3+ ions while some occupy interstitial and/or antisite positions in the In2S3 matrix. This results in thin films with different stoichiometry, described by the formula In4S6−xCl2x+2y. This changes the local bond configuration and geometry and underpins the influence of residual Cl on the physical properties of In2S3 thin films.

Original languageEnglish
Pages (from-to)84-88
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - Oct 15 2016

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation


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