Stoichiometry and local bond configuration of In2S3:Cl thin films by Rutherford backscattering spectrometry

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Abstract

In2S3 thin films deposited using chemical methods always contain residual elements from the precursors, which modify their properties. As buffer layers in solar cells, the residual elements in the In2S3 layer affect the performance of these devices. The stoichiometry of In2S3 thin films deposited by spray ion layer gas reaction (ILGAR) was studied as a function of the residual Cl from InCl3 precursor by varying the deposition parameters. The chemical formula was deduced from the elemental composition determined using Rutherford backscattering (RBS). Incomplete sulfurization of the precursor implies that residual Cl remains bonded to the In3+ ions while some occupy interstitial and/or antisite positions in the In2S3 matrix. This results in thin films with different stoichiometry, described by the formula In4S6−xCl2x+2y. This changes the local bond configuration and geometry and underpins the influence of residual Cl on the physical properties of In2S3 thin films.

Original languageEnglish
Pages (from-to)84-88
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume385
DOIs
Publication statusPublished - Oct 15 2016

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Rutherford backscattering spectroscopy
Stoichiometry
Spectrometry
stoichiometry
backscattering
Thin films
thin films
configurations
spectroscopy
Ions
Buffer layers
Chemical elements
sprayers
Solar cells
interstitials
ions
Physical properties
buffers
solar cells
physical properties

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

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title = "Stoichiometry and local bond configuration of In2S3:Cl thin films by Rutherford backscattering spectrometry",
abstract = "In2S3 thin films deposited using chemical methods always contain residual elements from the precursors, which modify their properties. As buffer layers in solar cells, the residual elements in the In2S3 layer affect the performance of these devices. The stoichiometry of In2S3 thin films deposited by spray ion layer gas reaction (ILGAR) was studied as a function of the residual Cl from InCl3 precursor by varying the deposition parameters. The chemical formula was deduced from the elemental composition determined using Rutherford backscattering (RBS). Incomplete sulfurization of the precursor implies that residual Cl− remains bonded to the In3+ ions while some occupy interstitial and/or antisite positions in the In2S3 matrix. This results in thin films with different stoichiometry, described by the formula In4S6−xCl2x+2y. This changes the local bond configuration and geometry and underpins the influence of residual Cl on the physical properties of In2S3 thin films.",
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T1 - Stoichiometry and local bond configuration of In2S3:Cl thin films by Rutherford backscattering spectrometry

AU - Juma, Albert O.

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N2 - In2S3 thin films deposited using chemical methods always contain residual elements from the precursors, which modify their properties. As buffer layers in solar cells, the residual elements in the In2S3 layer affect the performance of these devices. The stoichiometry of In2S3 thin films deposited by spray ion layer gas reaction (ILGAR) was studied as a function of the residual Cl from InCl3 precursor by varying the deposition parameters. The chemical formula was deduced from the elemental composition determined using Rutherford backscattering (RBS). Incomplete sulfurization of the precursor implies that residual Cl− remains bonded to the In3+ ions while some occupy interstitial and/or antisite positions in the In2S3 matrix. This results in thin films with different stoichiometry, described by the formula In4S6−xCl2x+2y. This changes the local bond configuration and geometry and underpins the influence of residual Cl on the physical properties of In2S3 thin films.

AB - In2S3 thin films deposited using chemical methods always contain residual elements from the precursors, which modify their properties. As buffer layers in solar cells, the residual elements in the In2S3 layer affect the performance of these devices. The stoichiometry of In2S3 thin films deposited by spray ion layer gas reaction (ILGAR) was studied as a function of the residual Cl from InCl3 precursor by varying the deposition parameters. The chemical formula was deduced from the elemental composition determined using Rutherford backscattering (RBS). Incomplete sulfurization of the precursor implies that residual Cl− remains bonded to the In3+ ions while some occupy interstitial and/or antisite positions in the In2S3 matrix. This results in thin films with different stoichiometry, described by the formula In4S6−xCl2x+2y. This changes the local bond configuration and geometry and underpins the influence of residual Cl on the physical properties of In2S3 thin films.

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