TY - JOUR
T1 - Stoichiometry and local bond configuration of In2S3:Cl thin films by Rutherford backscattering spectrometry
AU - Juma, Albert O.
PY - 2016/10/15
Y1 - 2016/10/15
N2 - In2S3 thin films deposited using chemical methods always contain residual elements from the precursors, which modify their properties. As buffer layers in solar cells, the residual elements in the In2S3 layer affect the performance of these devices. The stoichiometry of In2S3 thin films deposited by spray ion layer gas reaction (ILGAR) was studied as a function of the residual Cl from InCl3 precursor by varying the deposition parameters. The chemical formula was deduced from the elemental composition determined using Rutherford backscattering (RBS). Incomplete sulfurization of the precursor implies that residual Cl− remains bonded to the In3+ ions while some occupy interstitial and/or antisite positions in the In2S3 matrix. This results in thin films with different stoichiometry, described by the formula In4S6−xCl2x+2y. This changes the local bond configuration and geometry and underpins the influence of residual Cl on the physical properties of In2S3 thin films.
AB - In2S3 thin films deposited using chemical methods always contain residual elements from the precursors, which modify their properties. As buffer layers in solar cells, the residual elements in the In2S3 layer affect the performance of these devices. The stoichiometry of In2S3 thin films deposited by spray ion layer gas reaction (ILGAR) was studied as a function of the residual Cl from InCl3 precursor by varying the deposition parameters. The chemical formula was deduced from the elemental composition determined using Rutherford backscattering (RBS). Incomplete sulfurization of the precursor implies that residual Cl− remains bonded to the In3+ ions while some occupy interstitial and/or antisite positions in the In2S3 matrix. This results in thin films with different stoichiometry, described by the formula In4S6−xCl2x+2y. This changes the local bond configuration and geometry and underpins the influence of residual Cl on the physical properties of In2S3 thin films.
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U2 - 10.1016/j.nimb.2016.09.005
DO - 10.1016/j.nimb.2016.09.005
M3 - Article
AN - SCOPUS:84987957287
SN - 0168-583X
VL - 385
SP - 84
EP - 88
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ER -