Room-temperature interaction of ultrathin-film yttrium with SrTiO3(100), LaAlO3(100), and MgO(100) surfaces

Jens E.T. Andersen, Preben J. Møller

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The crystallographic and electronic structures of surfaces of the large-gap semiconductors SrTiO3(100) and LaAlO3(100), and of the insulator MgO (100), were followed during the initial stages of a metal-beam deposition of yttrium metal at room temperature. The techniques used are low-energy electron diffraction, Auger-, electron-energy-loss, and ultraviolet photoelectron spectroscopy. Yttrium grows epitaxially 1×1 on the MgO (100) surface and nonepitaxially on the LaAlO3(100) and SrTiO3(100) surfaces. Initially, below monolayer coverage, Y is strongly oxidized by the MgO(100) substrate. Near-monolayer yttrium coverages Y2+ is identified, and upon further Y deposition the oxidation state gradually changes further towards a lower value. Oxidation of an yttrium film on 1×1 MgO(100) results in changes around the Fermi level and changes in the core-level binding energies, but no changes in the upper valence band were observed.

Original languageEnglish
Pages (from-to)13645-13654
Number of pages10
JournalPhysical Review B
Volume44
Issue number24
DOIs
Publication statusPublished - Jan 1 1991

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yttrium
room temperature
interactions
oxidation
ultraviolet spectroscopy
metals
electron diffraction
energy dissipation
binding energy
insulators
photoelectron spectroscopy
electron energy
electronic structure
valence
energy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

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title = "Room-temperature interaction of ultrathin-film yttrium with SrTiO3(100), LaAlO3(100), and MgO(100) surfaces",
abstract = "The crystallographic and electronic structures of surfaces of the large-gap semiconductors SrTiO3(100) and LaAlO3(100), and of the insulator MgO (100), were followed during the initial stages of a metal-beam deposition of yttrium metal at room temperature. The techniques used are low-energy electron diffraction, Auger-, electron-energy-loss, and ultraviolet photoelectron spectroscopy. Yttrium grows epitaxially 1×1 on the MgO (100) surface and nonepitaxially on the LaAlO3(100) and SrTiO3(100) surfaces. Initially, below monolayer coverage, Y is strongly oxidized by the MgO(100) substrate. Near-monolayer yttrium coverages Y2+ is identified, and upon further Y deposition the oxidation state gradually changes further towards a lower value. Oxidation of an yttrium film on 1×1 MgO(100) results in changes around the Fermi level and changes in the core-level binding energies, but no changes in the upper valence band were observed.",
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Room-temperature interaction of ultrathin-film yttrium with SrTiO3(100), LaAlO3(100), and MgO(100) surfaces. / Andersen, Jens E.T.; Møller, Preben J.

In: Physical Review B, Vol. 44, No. 24, 01.01.1991, p. 13645-13654.

Research output: Contribution to journalArticle

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N2 - The crystallographic and electronic structures of surfaces of the large-gap semiconductors SrTiO3(100) and LaAlO3(100), and of the insulator MgO (100), were followed during the initial stages of a metal-beam deposition of yttrium metal at room temperature. The techniques used are low-energy electron diffraction, Auger-, electron-energy-loss, and ultraviolet photoelectron spectroscopy. Yttrium grows epitaxially 1×1 on the MgO (100) surface and nonepitaxially on the LaAlO3(100) and SrTiO3(100) surfaces. Initially, below monolayer coverage, Y is strongly oxidized by the MgO(100) substrate. Near-monolayer yttrium coverages Y2+ is identified, and upon further Y deposition the oxidation state gradually changes further towards a lower value. Oxidation of an yttrium film on 1×1 MgO(100) results in changes around the Fermi level and changes in the core-level binding energies, but no changes in the upper valence band were observed.

AB - The crystallographic and electronic structures of surfaces of the large-gap semiconductors SrTiO3(100) and LaAlO3(100), and of the insulator MgO (100), were followed during the initial stages of a metal-beam deposition of yttrium metal at room temperature. The techniques used are low-energy electron diffraction, Auger-, electron-energy-loss, and ultraviolet photoelectron spectroscopy. Yttrium grows epitaxially 1×1 on the MgO (100) surface and nonepitaxially on the LaAlO3(100) and SrTiO3(100) surfaces. Initially, below monolayer coverage, Y is strongly oxidized by the MgO(100) substrate. Near-monolayer yttrium coverages Y2+ is identified, and upon further Y deposition the oxidation state gradually changes further towards a lower value. Oxidation of an yttrium film on 1×1 MgO(100) results in changes around the Fermi level and changes in the core-level binding energies, but no changes in the upper valence band were observed.

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