Physical properties of gallium and aluminium co-doped zinc oxide thin films deposited at different radio frequency magnetron sputtering power

E. Muchuweni, T. S. Sathiaraj, H. Nyakotyo

    Research output: Contribution to journalArticle

    17 Citations (Scopus)

    Abstract

    Gallium and aluminium co-doped zinc oxide (GAZO) thin films were deposited by radio frequency (rf) magnetron sputtering onto glass substrates and the effect of rf power on their structural, optical and electrical properties was respectively investigated by X-ray Diffraction (XRD), Spectrophotometry and Four–Point Probe Resistivity measurements. All films had a hexagonal wurtzite crystal structure with a preferred (002) grain orientation. The films’ crystallinity deteriorated with increasing rf power from 150 W to 250 W as revealed by the increase in full width at half maximum (FWHM), decrease in mean crystallite size and increase in dislocation density. A further increase in rf power to 300 W caused slight improvements in crystallinity due to enhanced surface diffusion of the ad-atoms. High optical transmittances, around 80–90% were observed for all films in the visible region and their optical band gap red shifted from 3.32 eV to 3.20 eV with increasing rf power. The electrical resistivity firstly increased as the rf power changed from 150 W to 250 W and then decreased at 300 W. The lowest electrical resistivity of 5.0×10−1Ωcm and maximum figure of merit of 4.8×10−4Ω−1 were obtained for films deposited at 150 W, indicating their better performance in optoelectronic applications.

    Original languageEnglish
    Pages (from-to)17706-17710
    Number of pages5
    JournalCeramics International
    Volume42
    Issue number15
    DOIs
    Publication statusPublished - Nov 15 2016

    Fingerprint

    Zinc Oxide
    Gallium
    Zinc oxide
    Aluminum
    Magnetron sputtering
    Oxide films
    Physical properties
    Thin films
    Surface diffusion
    Optical band gaps
    Opacity
    Spectrophotometry
    Crystallite size
    Full width at half maximum
    Crystal orientation
    Optoelectronic devices
    Structural properties
    Electric properties
    Optical properties
    Crystal structure

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Process Chemistry and Technology
    • Surfaces, Coatings and Films
    • Materials Chemistry

    Cite this

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    abstract = "Gallium and aluminium co-doped zinc oxide (GAZO) thin films were deposited by radio frequency (rf) magnetron sputtering onto glass substrates and the effect of rf power on their structural, optical and electrical properties was respectively investigated by X-ray Diffraction (XRD), Spectrophotometry and Four–Point Probe Resistivity measurements. All films had a hexagonal wurtzite crystal structure with a preferred (002) grain orientation. The films’ crystallinity deteriorated with increasing rf power from 150 W to 250 W as revealed by the increase in full width at half maximum (FWHM), decrease in mean crystallite size and increase in dislocation density. A further increase in rf power to 300 W caused slight improvements in crystallinity due to enhanced surface diffusion of the ad-atoms. High optical transmittances, around 80–90{\%} were observed for all films in the visible region and their optical band gap red shifted from 3.32 eV to 3.20 eV with increasing rf power. The electrical resistivity firstly increased as the rf power changed from 150 W to 250 W and then decreased at 300 W. The lowest electrical resistivity of 5.0×10−1Ωcm and maximum figure of merit of 4.8×10−4Ω−1 were obtained for films deposited at 150 W, indicating their better performance in optoelectronic applications.",
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    Physical properties of gallium and aluminium co-doped zinc oxide thin films deposited at different radio frequency magnetron sputtering power. / Muchuweni, E.; Sathiaraj, T. S.; Nyakotyo, H.

    In: Ceramics International, Vol. 42, No. 15, 15.11.2016, p. 17706-17710.

    Research output: Contribution to journalArticle

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