Phase transformation in Pb:GeSbTe chalcogenide films

J. Kumar, P. Kumar, M. Ahmad, R. Chander, R. Thangaraj, S. Sathiaraj

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A comprehensive analysis on the amorphous to crystalline phase transformation in Pb:GeSbTe chalcogenide alloy has been discussed. The structure identified with X-ray measurements has been discussed in relation to thermal analysis carried out on bulk samples. Optical constants have been calculated in the 350 to 800 nm wavelength range, using Fresnel's equation. The effect of Pb substitution on the optical contrast in terms of change in reflectivity and optical parameters (viz. refractive index, extinction coefficient) has been discussed. Marginal decrease in the optical contrast has been observed with a small increase in Pb content, which is effective to maintain the sufficient signal to noise ratio for optical phase-change storage.

Original languageEnglish
Pages (from-to)117-123
Number of pages7
JournalEPJ Applied Physics
Volume44
Issue number2
DOIs
Publication statusPublished - Nov 1 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics

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  • Cite this

    Kumar, J., Kumar, P., Ahmad, M., Chander, R., Thangaraj, R., & Sathiaraj, S. (2008). Phase transformation in Pb:GeSbTe chalcogenide films. EPJ Applied Physics, 44(2), 117-123. https://doi.org/10.1051/epjap:2008165