Phase segregation in Pb:GeSbTe chalcogenide system

J. Kumar, M. Ahmad, R. Chander, R. Thangaraj, T. S. Sathiaraj

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of GeSbTe has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 °C in PbGeSbTe, PbGeSbTe, PbGeSbTe and PbGeSbTe respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition.

Original languageEnglish
Pages (from-to)13-18
Number of pages6
JournalEPJ Applied Physics
Volume41
Issue number1
DOIs
Publication statusPublished - Jan 1 2008

Fingerprint

Amorphization
Substitution reactions
substitutes
Crystalline materials
Thermal evaporation
Optical band gaps
Crystallization
Crystal lattices
evaporation
crystallization
Temperature
radii
temperature
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics

Cite this

Kumar, J. ; Ahmad, M. ; Chander, R. ; Thangaraj, R. ; Sathiaraj, T. S. / Phase segregation in Pb:GeSbTe chalcogenide system. In: EPJ Applied Physics. 2008 ; Vol. 41, No. 1. pp. 13-18.
@article{809c96ee5dec4369ab8937a9394a7779,
title = "Phase segregation in Pb:GeSbTe chalcogenide system",
abstract = "Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of GeSbTe has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 °C in PbGeSbTe, PbGeSbTe, PbGeSbTe and PbGeSbTe respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition.",
author = "J. Kumar and M. Ahmad and R. Chander and R. Thangaraj and Sathiaraj, {T. S.}",
year = "2008",
month = "1",
day = "1",
doi = "10.1051/epjap:2007173",
language = "English",
volume = "41",
pages = "13--18",
journal = "EPJ Applied Physics",
issn = "1286-0042",
publisher = "EDP Sciences",
number = "1",

}

Kumar, J, Ahmad, M, Chander, R, Thangaraj, R & Sathiaraj, TS 2008, 'Phase segregation in Pb:GeSbTe chalcogenide system', EPJ Applied Physics, vol. 41, no. 1, pp. 13-18. https://doi.org/10.1051/epjap:2007173

Phase segregation in Pb:GeSbTe chalcogenide system. / Kumar, J.; Ahmad, M.; Chander, R.; Thangaraj, R.; Sathiaraj, T. S.

In: EPJ Applied Physics, Vol. 41, No. 1, 01.01.2008, p. 13-18.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Phase segregation in Pb:GeSbTe chalcogenide system

AU - Kumar, J.

AU - Ahmad, M.

AU - Chander, R.

AU - Thangaraj, R.

AU - Sathiaraj, T. S.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of GeSbTe has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 °C in PbGeSbTe, PbGeSbTe, PbGeSbTe and PbGeSbTe respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition.

AB - Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of GeSbTe has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 °C in PbGeSbTe, PbGeSbTe, PbGeSbTe and PbGeSbTe respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition.

UR - http://www.scopus.com/inward/record.url?scp=38949127235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38949127235&partnerID=8YFLogxK

U2 - 10.1051/epjap:2007173

DO - 10.1051/epjap:2007173

M3 - Article

VL - 41

SP - 13

EP - 18

JO - EPJ Applied Physics

JF - EPJ Applied Physics

SN - 1286-0042

IS - 1

ER -