Phase segregation in Pb:GeSbTe chalcogenide system

J. Kumar, M. Ahmad, R. Chander, R. Thangaraj, T. S. Sathiaraj

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of GeSbTe has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 °C in PbGeSbTe, PbGeSbTe, PbGeSbTe and PbGeSbTe respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition.

Original languageEnglish
Pages (from-to)13-18
Number of pages6
JournalEPJ Applied Physics
Volume41
Issue number1
DOIs
Publication statusPublished - Jan 1 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics

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