Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications

K. Sun, I. Zeimpekis, C. Hu, N. M.J. Ditshego, O. Thomas, M. R.R. De Planque, H. M.H. Chong, H. Morgan, P. Ashburn

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this work, we demonstrate a wafer-level zinc oxide (ZnO) nanowire fabrication process using ion beam etching and a spacer etch technique. The proposed process can accurately define nanowires without an advanced photolithography and provide a high yield over a 6-inch wafer. The fabricated nanowires are 36 nm wide and 86 nm thick and present excellent transistor characteristics. The pH sensitivity using a liquid gate was found to be 46.5 mV/pH, while the pH sensitivity using a bottom gate showed a sensitivity of 366 mV/pH, which is attributed to the capacitance coupling between the top- and bottom-gates. The maximum process temperature used in the fabrication of the nanowire sensors is optimized to be 200 °C (after wet oxidation) which makes it applicable to low-cost substrates such as glass and plastic. The Ion Beam Etching (IBE) process in this work is shown to be highly transferable and can therefore be directly used to form nanowires of different materials, such as polysilicon and molybdenum disulfide, by only an adjustment of the etch time.

Original languageEnglish
Pages (from-to)96-100
Number of pages5
JournalMicroelectronic Engineering
Volume153
DOIs
Publication statusPublished - Mar 5 2016

Fingerprint

Zinc Oxide
Zinc oxide
zinc oxides
Ion beams
Nanowires
Etching
nanowires
ion beams
etching
sensors
Sensors
Costs
sensitivity
wafers
molybdenum disulfides
Fabrication
fabrication
disulfides
Photolithography
photolithography

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Sun, K. ; Zeimpekis, I. ; Hu, C. ; Ditshego, N. M.J. ; Thomas, O. ; De Planque, M. R.R. ; Chong, H. M.H. ; Morgan, H. ; Ashburn, P. / Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications. In: Microelectronic Engineering. 2016 ; Vol. 153. pp. 96-100.
@article{48ba64a247874d0b81f19ae36430f19e,
title = "Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications",
abstract = "In this work, we demonstrate a wafer-level zinc oxide (ZnO) nanowire fabrication process using ion beam etching and a spacer etch technique. The proposed process can accurately define nanowires without an advanced photolithography and provide a high yield over a 6-inch wafer. The fabricated nanowires are 36 nm wide and 86 nm thick and present excellent transistor characteristics. The pH sensitivity using a liquid gate was found to be 46.5 mV/pH, while the pH sensitivity using a bottom gate showed a sensitivity of 366 mV/pH, which is attributed to the capacitance coupling between the top- and bottom-gates. The maximum process temperature used in the fabrication of the nanowire sensors is optimized to be 200 °C (after wet oxidation) which makes it applicable to low-cost substrates such as glass and plastic. The Ion Beam Etching (IBE) process in this work is shown to be highly transferable and can therefore be directly used to form nanowires of different materials, such as polysilicon and molybdenum disulfide, by only an adjustment of the etch time.",
author = "K. Sun and I. Zeimpekis and C. Hu and Ditshego, {N. M.J.} and O. Thomas and {De Planque}, {M. R.R.} and Chong, {H. M.H.} and H. Morgan and P. Ashburn",
year = "2016",
month = "3",
day = "5",
doi = "10.1016/j.mee.2016.02.016",
language = "English",
volume = "153",
pages = "96--100",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications. / Sun, K.; Zeimpekis, I.; Hu, C.; Ditshego, N. M.J.; Thomas, O.; De Planque, M. R.R.; Chong, H. M.H.; Morgan, H.; Ashburn, P.

In: Microelectronic Engineering, Vol. 153, 05.03.2016, p. 96-100.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications

AU - Sun, K.

AU - Zeimpekis, I.

AU - Hu, C.

AU - Ditshego, N. M.J.

AU - Thomas, O.

AU - De Planque, M. R.R.

AU - Chong, H. M.H.

AU - Morgan, H.

AU - Ashburn, P.

PY - 2016/3/5

Y1 - 2016/3/5

N2 - In this work, we demonstrate a wafer-level zinc oxide (ZnO) nanowire fabrication process using ion beam etching and a spacer etch technique. The proposed process can accurately define nanowires without an advanced photolithography and provide a high yield over a 6-inch wafer. The fabricated nanowires are 36 nm wide and 86 nm thick and present excellent transistor characteristics. The pH sensitivity using a liquid gate was found to be 46.5 mV/pH, while the pH sensitivity using a bottom gate showed a sensitivity of 366 mV/pH, which is attributed to the capacitance coupling between the top- and bottom-gates. The maximum process temperature used in the fabrication of the nanowire sensors is optimized to be 200 °C (after wet oxidation) which makes it applicable to low-cost substrates such as glass and plastic. The Ion Beam Etching (IBE) process in this work is shown to be highly transferable and can therefore be directly used to form nanowires of different materials, such as polysilicon and molybdenum disulfide, by only an adjustment of the etch time.

AB - In this work, we demonstrate a wafer-level zinc oxide (ZnO) nanowire fabrication process using ion beam etching and a spacer etch technique. The proposed process can accurately define nanowires without an advanced photolithography and provide a high yield over a 6-inch wafer. The fabricated nanowires are 36 nm wide and 86 nm thick and present excellent transistor characteristics. The pH sensitivity using a liquid gate was found to be 46.5 mV/pH, while the pH sensitivity using a bottom gate showed a sensitivity of 366 mV/pH, which is attributed to the capacitance coupling between the top- and bottom-gates. The maximum process temperature used in the fabrication of the nanowire sensors is optimized to be 200 °C (after wet oxidation) which makes it applicable to low-cost substrates such as glass and plastic. The Ion Beam Etching (IBE) process in this work is shown to be highly transferable and can therefore be directly used to form nanowires of different materials, such as polysilicon and molybdenum disulfide, by only an adjustment of the etch time.

UR - http://www.scopus.com/inward/record.url?scp=84958954841&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958954841&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2016.02.016

DO - 10.1016/j.mee.2016.02.016

M3 - Article

AN - SCOPUS:84958954841

VL - 153

SP - 96

EP - 100

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -