Influence of Sn substitution on amorphous to crystalline phase transformation in Ge 22Sb 22Te 56 chalcogenide films

J. Kumar, R. Thangaraj, T. Stephen Sathiaraj

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The effect of Sn substitution on phase transformation in Ge 22Sb 22Te 56 (GST) chalcogenide system has been studied. Partial substitution of Sn upto 4 at% has been found to increase the phase transformation temperature of the GST. On further substitution of Sn (i.e. ∼ 6 at %) the films were found to exhibit decreased phase transformation temperature. Optical study does not show any considerable change in optical band gap for Sn 2 and 4 at%. XRD investigation of annealed samples revealed that Sn substitution retains NaCl type crystalline structure of GST.

Original languageEnglish
Pages (from-to)455-459
Number of pages5
JournalJournal of Optoelectronics and Advanced Materials
Issue number5-6
Publication statusPublished - May 1 2012


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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