Influence of Sn substitution on amorphous to crystalline phase transformation in Ge 22Sb 22Te 56 chalcogenide films

J. Kumar, R. Thangaraj, T. Stephen Sathiaraj

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effect of Sn substitution on phase transformation in Ge 22Sb 22Te 56 (GST) chalcogenide system has been studied. Partial substitution of Sn upto 4 at% has been found to increase the phase transformation temperature of the GST. On further substitution of Sn (i.e. ∼ 6 at %) the films were found to exhibit decreased phase transformation temperature. Optical study does not show any considerable change in optical band gap for Sn 2 and 4 at%. XRD investigation of annealed samples revealed that Sn substitution retains NaCl type crystalline structure of GST.

Original languageEnglish
Pages (from-to)455-459
Number of pages5
JournalJournal of Optoelectronics and Advanced Materials
Volume14
Issue number5-6
Publication statusPublished - May 1 2012

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phase transformations
Substitution reactions
Phase transitions
substitutes
Crystalline materials
Optical band gaps
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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Influence of Sn substitution on amorphous to crystalline phase transformation in Ge 22Sb 22Te 56 chalcogenide films. / Kumar, J.; Thangaraj, R.; Stephen Sathiaraj, T.

In: Journal of Optoelectronics and Advanced Materials, Vol. 14, No. 5-6, 01.05.2012, p. 455-459.

Research output: Contribution to journalArticle

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