Highly conductive and transparent Ga-doped ZnO thin films deposited by chemical spray pyrolysis

Charles Moditswe, Cosmas M. Muiva, Albert Juma

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Undoped and Ga doped ZnO thin films were deposited on borosilicate glass substrates via a simple but effective chemical spray pyrolysis technique. The samples were characterised by X-ray diffractometer, UV–vis spectrophotometry, Scanning electron microscopy and I–V measurements. The structural, morphological and optical properties were studied as a function of increasing Ga doping concentration from 0 to 7 at.%. XRD results revealed that the films were polycrystalline with hexagonal wurtzite crystal structure. Increasing Ga dopant concentration decreased the crystallite size from 74 to 19 nm whilst the band gap, dislocation density and lattice strain shifted to higher values. All the films exhibited high transmittance of about 85% in the entire visible spectral range. Lowest resistivity of 1.47 × 10−4 Ω cm was obtained at 3 at.% Ga concentration.

Original languageEnglish
Pages (from-to)8317-8325
Number of pages9
JournalOptik
Volume127
Issue number20
DOIs
Publication statusPublished - Oct 1 2016

Fingerprint

Spray pyrolysis
pyrolysis
sprayers
Doping (additives)
Thin films
Borosilicate glass
Diffractometers
Spectrophotometry
Crystallite size
thin films
Structural properties
Energy gap
Optical properties
Crystal structure
borosilicate glass
spectrophotometry
diffractometers
X rays
wurtzite
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Undoped and Ga doped ZnO thin films were deposited on borosilicate glass substrates via a simple but effective chemical spray pyrolysis technique. The samples were characterised by X-ray diffractometer, UV–vis spectrophotometry, Scanning electron microscopy and I–V measurements. The structural, morphological and optical properties were studied as a function of increasing Ga doping concentration from 0 to 7 at.{\%}. XRD results revealed that the films were polycrystalline with hexagonal wurtzite crystal structure. Increasing Ga dopant concentration decreased the crystallite size from 74 to 19 nm whilst the band gap, dislocation density and lattice strain shifted to higher values. All the films exhibited high transmittance of about 85{\%} in the entire visible spectral range. Lowest resistivity of 1.47 × 10−4 Ω cm was obtained at 3 at.{\%} Ga concentration.",
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Highly conductive and transparent Ga-doped ZnO thin films deposited by chemical spray pyrolysis. / Moditswe, Charles; Muiva, Cosmas M.; Juma, Albert.

In: Optik, Vol. 127, No. 20, 01.10.2016, p. 8317-8325.

Research output: Contribution to journalArticle

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