Heterogeneous crystallization and composition dependence of optical parameters in Sn-Sb-Bi-Se chalcogenides

Muneer Ahmad, R. Thangaraj, T. Stephen Sathiaraj

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Bulk samples of Sn10Sb20-x Bi x Se 70 (0 ≤ x ≤ 8) chalcogenide alloys were prepared by the conventional melt quenching technique. Thin films were prepared on well-cleaned glass substrates by thermal evaporation technique. X-ray diffraction studies revealed that the alloys with x = 0 and 2 at.% of Bi were amorphous, whereas the alloys with x = 4, 6, 8 at.% were crystalline. The crystalline phases are identified as due to the formation of Bi2Se3 and BiSe 2 phases. The microstructural and differential scanning calorimetric studies show the presence of these phases. A simple, straight forward procedure suggested by Swanepoel has been used to calculate the optical parameters, refractive index, and extinction coefficient. The optical gap for all the samples has been obtained from the Tauc plots. The variation in optical parameters for different Bi concentration has been explained on the basis of presence of defect states and the change in stoichiometry with the change in Bi concentration.

Original languageEnglish
Pages (from-to)1231-1236
Number of pages6
JournalJournal of Materials Science
Volume45
Issue number5
DOIs
Publication statusPublished - Mar 1 2010

Fingerprint

Chalcogenides
Crystallization
Chemical analysis
Crystalline materials
Thermal evaporation
Stoichiometry
Quenching
Refractive index
Scanning
X ray diffraction
Glass
Thin films
Defects
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{d116a5fc982e416db9bc7d323edc8a4b,
title = "Heterogeneous crystallization and composition dependence of optical parameters in Sn-Sb-Bi-Se chalcogenides",
abstract = "Bulk samples of Sn10Sb20-x Bi x Se 70 (0 ≤ x ≤ 8) chalcogenide alloys were prepared by the conventional melt quenching technique. Thin films were prepared on well-cleaned glass substrates by thermal evaporation technique. X-ray diffraction studies revealed that the alloys with x = 0 and 2 at.{\%} of Bi were amorphous, whereas the alloys with x = 4, 6, 8 at.{\%} were crystalline. The crystalline phases are identified as due to the formation of Bi2Se3 and BiSe 2 phases. The microstructural and differential scanning calorimetric studies show the presence of these phases. A simple, straight forward procedure suggested by Swanepoel has been used to calculate the optical parameters, refractive index, and extinction coefficient. The optical gap for all the samples has been obtained from the Tauc plots. The variation in optical parameters for different Bi concentration has been explained on the basis of presence of defect states and the change in stoichiometry with the change in Bi concentration.",
author = "Muneer Ahmad and R. Thangaraj and Sathiaraj, {T. Stephen}",
year = "2010",
month = "3",
day = "1",
doi = "10.1007/s10853-009-4071-x",
language = "English",
volume = "45",
pages = "1231--1236",
journal = "Journal of Materials Science",
issn = "0022-2461",
publisher = "Springer Netherlands",
number = "5",

}

Heterogeneous crystallization and composition dependence of optical parameters in Sn-Sb-Bi-Se chalcogenides. / Ahmad, Muneer; Thangaraj, R.; Sathiaraj, T. Stephen.

In: Journal of Materials Science, Vol. 45, No. 5, 01.03.2010, p. 1231-1236.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Heterogeneous crystallization and composition dependence of optical parameters in Sn-Sb-Bi-Se chalcogenides

AU - Ahmad, Muneer

AU - Thangaraj, R.

AU - Sathiaraj, T. Stephen

PY - 2010/3/1

Y1 - 2010/3/1

N2 - Bulk samples of Sn10Sb20-x Bi x Se 70 (0 ≤ x ≤ 8) chalcogenide alloys were prepared by the conventional melt quenching technique. Thin films were prepared on well-cleaned glass substrates by thermal evaporation technique. X-ray diffraction studies revealed that the alloys with x = 0 and 2 at.% of Bi were amorphous, whereas the alloys with x = 4, 6, 8 at.% were crystalline. The crystalline phases are identified as due to the formation of Bi2Se3 and BiSe 2 phases. The microstructural and differential scanning calorimetric studies show the presence of these phases. A simple, straight forward procedure suggested by Swanepoel has been used to calculate the optical parameters, refractive index, and extinction coefficient. The optical gap for all the samples has been obtained from the Tauc plots. The variation in optical parameters for different Bi concentration has been explained on the basis of presence of defect states and the change in stoichiometry with the change in Bi concentration.

AB - Bulk samples of Sn10Sb20-x Bi x Se 70 (0 ≤ x ≤ 8) chalcogenide alloys were prepared by the conventional melt quenching technique. Thin films were prepared on well-cleaned glass substrates by thermal evaporation technique. X-ray diffraction studies revealed that the alloys with x = 0 and 2 at.% of Bi were amorphous, whereas the alloys with x = 4, 6, 8 at.% were crystalline. The crystalline phases are identified as due to the formation of Bi2Se3 and BiSe 2 phases. The microstructural and differential scanning calorimetric studies show the presence of these phases. A simple, straight forward procedure suggested by Swanepoel has been used to calculate the optical parameters, refractive index, and extinction coefficient. The optical gap for all the samples has been obtained from the Tauc plots. The variation in optical parameters for different Bi concentration has been explained on the basis of presence of defect states and the change in stoichiometry with the change in Bi concentration.

UR - http://www.scopus.com/inward/record.url?scp=76649138280&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76649138280&partnerID=8YFLogxK

U2 - 10.1007/s10853-009-4071-x

DO - 10.1007/s10853-009-4071-x

M3 - Article

AN - SCOPUS:76649138280

VL - 45

SP - 1231

EP - 1236

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 5

ER -