Formation of a disorderd hetero-junction by diffusion of Cu I from CuSCN into In 2S 3 layers: A surface photovoltage study

Albert Juma, Jaison Kavalakkatt, Paul Pistor, Björn Latzel, Klaus Schwarzburg, Thomas Dittrich

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Charge-selective disordered hetero-junctions were formed in evaporated In 2S 3 layers by diffusing at 200 °C Cu I from a CuSCN source. The thicknesses of In 2S 3 layers and diffusion times were varied between 5 and 80 nm and between 2 and 19 min, respectively. In some cases CuSCN layers were etched back with pyridine. Spectral and time-dependent surface photovoltage measurements were carried out in the capacitor arrangement. It was observed that a competing process of charge separation and relaxation was initiated together with the formation of the charge-selective In 2S 3/In 2S 3:Cu hetero-junction. Modulated SPV amplitude for different annealing times and thicknesses of the evaporated In 2S 3 layers.

Original languageEnglish
Pages (from-to)663-668
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number4
Publication statusPublished - Apr 2012


All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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