Formation of a disorderd hetero-junction by diffusion of Cu I from CuSCN into In 2S 3 layers

A surface photovoltage study

Albert Juma, Jaison Kavalakkatt, Paul Pistor, Björn Latzel, Klaus Schwarzburg, Thomas Dittrich

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    Charge-selective disordered hetero-junctions were formed in evaporated In 2S 3 layers by diffusing at 200 °C Cu I from a CuSCN source. The thicknesses of In 2S 3 layers and diffusion times were varied between 5 and 80 nm and between 2 and 19 min, respectively. In some cases CuSCN layers were etched back with pyridine. Spectral and time-dependent surface photovoltage measurements were carried out in the capacitor arrangement. It was observed that a competing process of charge separation and relaxation was initiated together with the formation of the charge-selective In 2S 3/In 2S 3:Cu hetero-junction. Modulated SPV amplitude for different annealing times and thicknesses of the evaporated In 2S 3 layers.

    Original languageEnglish
    Pages (from-to)663-668
    Number of pages6
    JournalPhysica Status Solidi (A) Applications and Materials Science
    Volume209
    Issue number4
    DOIs
    Publication statusPublished - Apr 2012

    Fingerprint

    Surface measurement
    photovoltages
    Pyridine
    Capacitors
    Annealing
    polarization (charge separation)
    pyridines
    capacitors
    annealing
    cuprous thiocyanate
    pyridine

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

    Cite this

    Juma, Albert ; Kavalakkatt, Jaison ; Pistor, Paul ; Latzel, Björn ; Schwarzburg, Klaus ; Dittrich, Thomas. / Formation of a disorderd hetero-junction by diffusion of Cu I from CuSCN into In 2S 3 layers : A surface photovoltage study. In: Physica Status Solidi (A) Applications and Materials Science. 2012 ; Vol. 209, No. 4. pp. 663-668.
    @article{0b984896d91a46c3afb8bf5aa9e4eef3,
    title = "Formation of a disorderd hetero-junction by diffusion of Cu I from CuSCN into In 2S 3 layers: A surface photovoltage study",
    abstract = "Charge-selective disordered hetero-junctions were formed in evaporated In 2S 3 layers by diffusing at 200 °C Cu I from a CuSCN source. The thicknesses of In 2S 3 layers and diffusion times were varied between 5 and 80 nm and between 2 and 19 min, respectively. In some cases CuSCN layers were etched back with pyridine. Spectral and time-dependent surface photovoltage measurements were carried out in the capacitor arrangement. It was observed that a competing process of charge separation and relaxation was initiated together with the formation of the charge-selective In 2S 3/In 2S 3:Cu hetero-junction. Modulated SPV amplitude for different annealing times and thicknesses of the evaporated In 2S 3 layers.",
    author = "Albert Juma and Jaison Kavalakkatt and Paul Pistor and Bj{\"o}rn Latzel and Klaus Schwarzburg and Thomas Dittrich",
    year = "2012",
    month = "4",
    doi = "10.1002/pssa.201100509",
    language = "English",
    volume = "209",
    pages = "663--668",
    journal = "Physica Status Solidi (A) Applications and Materials Science",
    issn = "1862-6300",
    publisher = "Wiley-VCH Verlag",
    number = "4",

    }

    Formation of a disorderd hetero-junction by diffusion of Cu I from CuSCN into In 2S 3 layers : A surface photovoltage study. / Juma, Albert; Kavalakkatt, Jaison; Pistor, Paul; Latzel, Björn; Schwarzburg, Klaus; Dittrich, Thomas.

    In: Physica Status Solidi (A) Applications and Materials Science, Vol. 209, No. 4, 04.2012, p. 663-668.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Formation of a disorderd hetero-junction by diffusion of Cu I from CuSCN into In 2S 3 layers

    T2 - A surface photovoltage study

    AU - Juma, Albert

    AU - Kavalakkatt, Jaison

    AU - Pistor, Paul

    AU - Latzel, Björn

    AU - Schwarzburg, Klaus

    AU - Dittrich, Thomas

    PY - 2012/4

    Y1 - 2012/4

    N2 - Charge-selective disordered hetero-junctions were formed in evaporated In 2S 3 layers by diffusing at 200 °C Cu I from a CuSCN source. The thicknesses of In 2S 3 layers and diffusion times were varied between 5 and 80 nm and between 2 and 19 min, respectively. In some cases CuSCN layers were etched back with pyridine. Spectral and time-dependent surface photovoltage measurements were carried out in the capacitor arrangement. It was observed that a competing process of charge separation and relaxation was initiated together with the formation of the charge-selective In 2S 3/In 2S 3:Cu hetero-junction. Modulated SPV amplitude for different annealing times and thicknesses of the evaporated In 2S 3 layers.

    AB - Charge-selective disordered hetero-junctions were formed in evaporated In 2S 3 layers by diffusing at 200 °C Cu I from a CuSCN source. The thicknesses of In 2S 3 layers and diffusion times were varied between 5 and 80 nm and between 2 and 19 min, respectively. In some cases CuSCN layers were etched back with pyridine. Spectral and time-dependent surface photovoltage measurements were carried out in the capacitor arrangement. It was observed that a competing process of charge separation and relaxation was initiated together with the formation of the charge-selective In 2S 3/In 2S 3:Cu hetero-junction. Modulated SPV amplitude for different annealing times and thicknesses of the evaporated In 2S 3 layers.

    UR - http://www.scopus.com/inward/record.url?scp=84859322060&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84859322060&partnerID=8YFLogxK

    U2 - 10.1002/pssa.201100509

    DO - 10.1002/pssa.201100509

    M3 - Article

    VL - 209

    SP - 663

    EP - 668

    JO - Physica Status Solidi (A) Applications and Materials Science

    JF - Physica Status Solidi (A) Applications and Materials Science

    SN - 1862-6300

    IS - 4

    ER -