Formation of a disorderd hetero-junction by diffusion of Cu I from CuSCN into In 2S 3 layers: A surface photovoltage study

Albert Juma, Jaison Kavalakkatt, Paul Pistor, Björn Latzel, Klaus Schwarzburg, Thomas Dittrich

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Charge-selective disordered hetero-junctions were formed in evaporated In 2S 3 layers by diffusing at 200 °C Cu I from a CuSCN source. The thicknesses of In 2S 3 layers and diffusion times were varied between 5 and 80 nm and between 2 and 19 min, respectively. In some cases CuSCN layers were etched back with pyridine. Spectral and time-dependent surface photovoltage measurements were carried out in the capacitor arrangement. It was observed that a competing process of charge separation and relaxation was initiated together with the formation of the charge-selective In 2S 3/In 2S 3:Cu hetero-junction. Modulated SPV amplitude for different annealing times and thicknesses of the evaporated In 2S 3 layers.

Original languageEnglish
Pages (from-to)663-668
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume209
Issue number4
DOIs
Publication statusPublished - Apr 2012

Fingerprint

Surface measurement
photovoltages
Pyridine
Capacitors
Annealing
polarization (charge separation)
pyridines
capacitors
annealing
cuprous thiocyanate
pyridine

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Juma, Albert ; Kavalakkatt, Jaison ; Pistor, Paul ; Latzel, Björn ; Schwarzburg, Klaus ; Dittrich, Thomas. / Formation of a disorderd hetero-junction by diffusion of Cu I from CuSCN into In 2S 3 layers : A surface photovoltage study. In: Physica Status Solidi (A) Applications and Materials Science. 2012 ; Vol. 209, No. 4. pp. 663-668.
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Formation of a disorderd hetero-junction by diffusion of Cu I from CuSCN into In 2S 3 layers : A surface photovoltage study. / Juma, Albert; Kavalakkatt, Jaison; Pistor, Paul; Latzel, Björn; Schwarzburg, Klaus; Dittrich, Thomas.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 209, No. 4, 04.2012, p. 663-668.

Research output: Contribution to journalArticle

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T1 - Formation of a disorderd hetero-junction by diffusion of Cu I from CuSCN into In 2S 3 layers

T2 - A surface photovoltage study

AU - Juma, Albert

AU - Kavalakkatt, Jaison

AU - Pistor, Paul

AU - Latzel, Björn

AU - Schwarzburg, Klaus

AU - Dittrich, Thomas

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AB - Charge-selective disordered hetero-junctions were formed in evaporated In 2S 3 layers by diffusing at 200 °C Cu I from a CuSCN source. The thicknesses of In 2S 3 layers and diffusion times were varied between 5 and 80 nm and between 2 and 19 min, respectively. In some cases CuSCN layers were etched back with pyridine. Spectral and time-dependent surface photovoltage measurements were carried out in the capacitor arrangement. It was observed that a competing process of charge separation and relaxation was initiated together with the formation of the charge-selective In 2S 3/In 2S 3:Cu hetero-junction. Modulated SPV amplitude for different annealing times and thicknesses of the evaporated In 2S 3 layers.

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