Fabrication and characterization of spray pyrolysed inxsy thin films for cuins2 solar cells

K. Maabong, C. Muiva

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Indium sulphide thin films were prepared at different substrate temperatures and indium to sulphur ratio [In/S] using spray pyrolysis from indium (iii) chloride and thiourea precursor solution. The films were characterised using X-ray diffraction (XRD), optical absorption and electrical measurements. All the films showed preferred orientation along the (220) direction. There was energy gap modification when the indium to sulphur ratio [In/S] was adjusted from 2/3 (2.4 eV) with shift towards higher energy for higher values. The energy gap increased with substrate temperature for films prepared within the temperature range of 483K to 705K. Electrical resistivity measured at 300 K decreased with increasing substrate temperature from 1.16x10 2 Ω cm at 483 K to 1.62 x 10 0 Ω cm at 705 K. In 2S 3 prepared at intermediate temperature showed high potential for use as buffer layers in photovoltaic heterojunction devices.

    Original languageEnglish
    Title of host publicationProceedings of the 3rd IASTED African Conference on Power and Energy Systems, AfricaPES 2010
    Pages22-28
    Number of pages7
    Publication statusPublished - 2010
    Event3rd IASTED African Conference on Power and Energy Systems, AfricaPES 2010 - Gaborone, Botswana
    Duration: Sep 6 2010Sep 8 2010

    Other

    Other3rd IASTED African Conference on Power and Energy Systems, AfricaPES 2010
    CountryBotswana
    CityGaborone
    Period9/6/109/8/10

    Fingerprint

    sprayers
    Solar cells
    solar cells
    indium
    Fabrication
    Thin films
    fabrication
    Indium
    thin films
    sulfur
    indium sulfides
    heterojunction devices
    Energy gap
    Substrates
    Indium sulfide
    Sulfur
    Temperature
    temperature
    thioureas
    Spray pyrolysis

    All Science Journal Classification (ASJC) codes

    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering
    • Condensed Matter Physics

    Cite this

    Maabong, K., & Muiva, C. (2010). Fabrication and characterization of spray pyrolysed inxsy thin films for cuins2 solar cells. In Proceedings of the 3rd IASTED African Conference on Power and Energy Systems, AfricaPES 2010 (pp. 22-28)
    Maabong, K. ; Muiva, C. / Fabrication and characterization of spray pyrolysed inxsy thin films for cuins2 solar cells. Proceedings of the 3rd IASTED African Conference on Power and Energy Systems, AfricaPES 2010. 2010. pp. 22-28
    @inproceedings{b1d322eb29404633853fe33594f9a347,
    title = "Fabrication and characterization of spray pyrolysed inxsy thin films for cuins2 solar cells",
    abstract = "Indium sulphide thin films were prepared at different substrate temperatures and indium to sulphur ratio [In/S] using spray pyrolysis from indium (iii) chloride and thiourea precursor solution. The films were characterised using X-ray diffraction (XRD), optical absorption and electrical measurements. All the films showed preferred orientation along the (220) direction. There was energy gap modification when the indium to sulphur ratio [In/S] was adjusted from 2/3 (2.4 eV) with shift towards higher energy for higher values. The energy gap increased with substrate temperature for films prepared within the temperature range of 483K to 705K. Electrical resistivity measured at 300 K decreased with increasing substrate temperature from 1.16x10 2 Ω cm at 483 K to 1.62 x 10 0 Ω cm at 705 K. In 2S 3 prepared at intermediate temperature showed high potential for use as buffer layers in photovoltaic heterojunction devices.",
    author = "K. Maabong and C. Muiva",
    year = "2010",
    language = "English",
    isbn = "9780889868755",
    pages = "22--28",
    booktitle = "Proceedings of the 3rd IASTED African Conference on Power and Energy Systems, AfricaPES 2010",

    }

    Maabong, K & Muiva, C 2010, Fabrication and characterization of spray pyrolysed inxsy thin films for cuins2 solar cells. in Proceedings of the 3rd IASTED African Conference on Power and Energy Systems, AfricaPES 2010. pp. 22-28, 3rd IASTED African Conference on Power and Energy Systems, AfricaPES 2010, Gaborone, Botswana, 9/6/10.

    Fabrication and characterization of spray pyrolysed inxsy thin films for cuins2 solar cells. / Maabong, K.; Muiva, C.

    Proceedings of the 3rd IASTED African Conference on Power and Energy Systems, AfricaPES 2010. 2010. p. 22-28.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    TY - GEN

    T1 - Fabrication and characterization of spray pyrolysed inxsy thin films for cuins2 solar cells

    AU - Maabong, K.

    AU - Muiva, C.

    PY - 2010

    Y1 - 2010

    N2 - Indium sulphide thin films were prepared at different substrate temperatures and indium to sulphur ratio [In/S] using spray pyrolysis from indium (iii) chloride and thiourea precursor solution. The films were characterised using X-ray diffraction (XRD), optical absorption and electrical measurements. All the films showed preferred orientation along the (220) direction. There was energy gap modification when the indium to sulphur ratio [In/S] was adjusted from 2/3 (2.4 eV) with shift towards higher energy for higher values. The energy gap increased with substrate temperature for films prepared within the temperature range of 483K to 705K. Electrical resistivity measured at 300 K decreased with increasing substrate temperature from 1.16x10 2 Ω cm at 483 K to 1.62 x 10 0 Ω cm at 705 K. In 2S 3 prepared at intermediate temperature showed high potential for use as buffer layers in photovoltaic heterojunction devices.

    AB - Indium sulphide thin films were prepared at different substrate temperatures and indium to sulphur ratio [In/S] using spray pyrolysis from indium (iii) chloride and thiourea precursor solution. The films were characterised using X-ray diffraction (XRD), optical absorption and electrical measurements. All the films showed preferred orientation along the (220) direction. There was energy gap modification when the indium to sulphur ratio [In/S] was adjusted from 2/3 (2.4 eV) with shift towards higher energy for higher values. The energy gap increased with substrate temperature for films prepared within the temperature range of 483K to 705K. Electrical resistivity measured at 300 K decreased with increasing substrate temperature from 1.16x10 2 Ω cm at 483 K to 1.62 x 10 0 Ω cm at 705 K. In 2S 3 prepared at intermediate temperature showed high potential for use as buffer layers in photovoltaic heterojunction devices.

    UR - http://www.scopus.com/inward/record.url?scp=84858630584&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84858630584&partnerID=8YFLogxK

    M3 - Conference contribution

    SN - 9780889868755

    SP - 22

    EP - 28

    BT - Proceedings of the 3rd IASTED African Conference on Power and Energy Systems, AfricaPES 2010

    ER -

    Maabong K, Muiva C. Fabrication and characterization of spray pyrolysed inxsy thin films for cuins2 solar cells. In Proceedings of the 3rd IASTED African Conference on Power and Energy Systems, AfricaPES 2010. 2010. p. 22-28