Effects of surface passivation on top-down ZnO nanowire transistors

N. M.J. Ditshego, K. Sun, I. Zeimpekis, P. Ashburn, M. R.R. De Planque, H. M.H. Chong

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 106 and field effect mobility of 31.4 cm2/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to -10 V, drain current on/off ratio of 104 and improvement of mobility of 35.5 cm2/V s. The passivated device results indicate suitability for biosensing applications.

Original languageEnglish
Pages (from-to)91-95
Number of pages5
JournalMicroelectronic Engineering
Volume145
DOIs
Publication statusPublished - Sep 1 2015

Fingerprint

Zinc Oxide
Field effect transistors
Zinc oxide
Passivation
zinc oxides
passivity
Nanowires
Transistors
nanowires
transistors
field effect transistors
Drain current
Threshold voltage
threshold voltage
Plasma deposition
Atomic layer deposition
atomic layer epitaxy
shift

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Ditshego, N. M. J., Sun, K., Zeimpekis, I., Ashburn, P., De Planque, M. R. R., & Chong, H. M. H. (2015). Effects of surface passivation on top-down ZnO nanowire transistors. Microelectronic Engineering, 145, 91-95. https://doi.org/10.1016/j.mee.2015.03.013
Ditshego, N. M.J. ; Sun, K. ; Zeimpekis, I. ; Ashburn, P. ; De Planque, M. R.R. ; Chong, H. M.H. / Effects of surface passivation on top-down ZnO nanowire transistors. In: Microelectronic Engineering. 2015 ; Vol. 145. pp. 91-95.
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Effects of surface passivation on top-down ZnO nanowire transistors. / Ditshego, N. M.J.; Sun, K.; Zeimpekis, I.; Ashburn, P.; De Planque, M. R.R.; Chong, H. M.H.

In: Microelectronic Engineering, Vol. 145, 01.09.2015, p. 91-95.

Research output: Contribution to journalArticle

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T1 - Effects of surface passivation on top-down ZnO nanowire transistors

AU - Ditshego, N. M.J.

AU - Sun, K.

AU - Zeimpekis, I.

AU - Ashburn, P.

AU - De Planque, M. R.R.

AU - Chong, H. M.H.

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