Effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)

A. A. Ogwu; R. W. Lamberton; P. D. Maguire; J. A. McLaughlin

doi:10.1088/0022-3727/32/9/306

Effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)

A. A. Ogwu, R. W. Lamberton, P. D. Maguire, J. A. McLaughlin

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 °C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.

Original language	English
Pages (from-to)	981-987
Number of pages	7
Journal	Journal of Physics D: Applied Physics
Volume	32
Issue number	9
DOIs	https://doi.org/10.1088/0022-3727/32/9/306
Publication status	Published - May 7 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/32/9/306

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title = "Effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)",

abstract = "An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 °C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.",

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doi = "10.1088/0022-3727/32/9/306",

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Effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD). / Ogwu, A. A.; Lamberton, R. W.; Maguire, P. D.; McLaughlin, J. A.

In: Journal of Physics D: Applied Physics, Vol. 32, No. 9, 07.05.1999, p. 981-987.

Research output: Contribution to journal › Article › peer-review

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AU - Maguire, P. D.

AU - McLaughlin, J. A.

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Effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)

Abstract

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