Abstract
An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 °C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.
Original language | English |
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Pages (from-to) | 981-987 |
Number of pages | 7 |
Journal | Journal of Physics D: Applied Physics |
Volume | 32 |
Issue number | 9 |
DOIs | |
Publication status | Published - May 7 1999 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films