Effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)

A. A. Ogwu; R. W. Lamberton; P. D. Maguire; J. A. McLaughlin

doi:10.1088/0022-3727/32/9/306

Effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)

A. A. Ogwu, R. W. Lamberton, P. D. Maguire, J. A. McLaughlin

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 °C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.

Original language	English
Pages (from-to)	981-987
Number of pages	7
Journal	Journal of Physics D: Applied Physics
Volume	32
Issue number	9
DOIs	https://doi.org/10.1088/0022-3727/32/9/306
Publication status	Published - May 7 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/32/9/306

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@article{87f7af80e0d54601a2d230253f89dcaa,

title = "Effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)",

abstract = "An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 °C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.",

author = "Ogwu, {A. A.} and Lamberton, {R. W.} and Maguire, {P. D.} and McLaughlin, {J. A.}",

year = "1999",

month = may,

day = "7",

doi = "10.1088/0022-3727/32/9/306",

language = "English",

volume = "32",

pages = "981--987",

journal = "Journal Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "9",

}

Effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD). / Ogwu, A. A.; Lamberton, R. W.; Maguire, P. D. et al.

In: Journal of Physics D: Applied Physics, Vol. 32, No. 9, 07.05.1999, p. 981-987.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)

AU - Ogwu, A. A.

AU - Lamberton, R. W.

AU - Maguire, P. D.

AU - McLaughlin, J. A.

PY - 1999/5/7

Y1 - 1999/5/7

N2 - An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 °C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.

AB - An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 °C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.

UR - http://www.scopus.com/inward/record.url?scp=0032684298&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032684298&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/32/9/306

DO - 10.1088/0022-3727/32/9/306

M3 - Article

AN - SCOPUS:0032684298

VL - 32

SP - 981

EP - 987

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 9

ER -

Effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)

Abstract

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