Effect of O2/Ar flow ratio on Ga and Al co-doped ZnO thin films by rf sputtering for optoelectronic device fabrication

E. Muchuweni, T. S. Sathiaraj, H. Nyakotyo

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12 Citations (Scopus)

Abstract

Ga and Al co-doped ZnO thin films were prepared on glass substrates by radio frequency magnetron sputtering and the effect of O2/Ar flow ratio on their physical properties was investigated. The films exhibited a hexagonal wurtzite structure with a predominant (002) peak intensity and their crystallinity improved with O2/Ar flow ratio. Raman spectroscopy confirmed the films’ wurtzite structure and revealed a decrease in residual tensile stress and charge carrier concentration with increasing O2/Ar flow ratio. Low surface roughness resulted in high optical transmittances around 85–90% in the visible region. The Urbach energy decreased with increasing O2/Ar flow ratio indicating a reduction in structural disorders. This was consistent with Raman spectroscopy and X-ray diffraction analysis. The least electrical resistivity (2.6×101 Ωcm) and highest figure of merit (8.8 × 10−6 Ω−1) for films prepared with oxygen admittance were obtained at 0.667 O2/Ar flow ratio, indicating their suitability in optoelectronic device fabrication.

Original languageEnglish
Pages (from-to)123-128
Number of pages6
JournalMaterials Research Bulletin
Volume95
DOIs
Publication statusPublished - Nov 2017

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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