Effect of gallium doping on the structural, optical and electrical properties of zinc oxide thin films prepared by spray pyrolysis

E. Muchuweni, T. S. Sathiaraj, H. Nyakotyo

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Gallium-doped zinc oxide (GZO) thin films were deposited onto glass substrates by the spray pyrolysis technique and the effect of gallium (Ga) doping on their structural, optical and electrical properties was investigated by X-ray Diffraction (XRD), Spectrophotometry and Current-Voltage (I-V) measurements, respectively. XRD studies revealed that all films were polycrystalline in nature, with a hexagonal wurtzite crystal structure and a predominant (002) c-axis orientation. Ga doping resulted in deterioration of the film's crystallinity, increase in full width at half maximum (FWHM) and reduction in the mean crystallite sizes. All GZO thin films had relatively higher average transmittances, approximately 70-85% in the visible region as compared to the undoped ZnO thin films. Introduction of Ga led to a blue shift in the optical band gap from 3.26 eV to 3.30 eV and an increase in the Urbach energy from around 67 meV to 100 meV. Ga doping induced a decrease in sheet resistance leading to a minimum electrical resistivity of 1.2 ω cm and a maximum figure of merit of 1.02×10-4 Ω-1 for the 1 at% GZO thin film, indicating its suitability for optoelectronic applications, especially transparent electrode fabrication.

Original languageEnglish
Pages (from-to)10066-10070
Number of pages5
JournalCeramics International
Volume42
Issue number8
DOIs
Publication statusPublished - Jun 1 2016

Fingerprint

Zinc Oxide
Gallium
Spray pyrolysis
Zinc oxide
Oxide films
Structural properties
Electric properties
Optical properties
Doping (additives)
Thin films
X ray diffraction
Sheet resistance
Optical band gaps
Spectrophotometry
Crystallite size
Full width at half maximum
Optoelectronic devices
Deterioration
Crystal structure
Fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

@article{1a56bd8bce12482bb449b8f0ff97bb7e,
title = "Effect of gallium doping on the structural, optical and electrical properties of zinc oxide thin films prepared by spray pyrolysis",
abstract = "Gallium-doped zinc oxide (GZO) thin films were deposited onto glass substrates by the spray pyrolysis technique and the effect of gallium (Ga) doping on their structural, optical and electrical properties was investigated by X-ray Diffraction (XRD), Spectrophotometry and Current-Voltage (I-V) measurements, respectively. XRD studies revealed that all films were polycrystalline in nature, with a hexagonal wurtzite crystal structure and a predominant (002) c-axis orientation. Ga doping resulted in deterioration of the film's crystallinity, increase in full width at half maximum (FWHM) and reduction in the mean crystallite sizes. All GZO thin films had relatively higher average transmittances, approximately 70-85{\%} in the visible region as compared to the undoped ZnO thin films. Introduction of Ga led to a blue shift in the optical band gap from 3.26 eV to 3.30 eV and an increase in the Urbach energy from around 67 meV to 100 meV. Ga doping induced a decrease in sheet resistance leading to a minimum electrical resistivity of 1.2 ω cm and a maximum figure of merit of 1.02×10-4 Ω-1 for the 1 at{\%} GZO thin film, indicating its suitability for optoelectronic applications, especially transparent electrode fabrication.",
author = "E. Muchuweni and Sathiaraj, {T. S.} and H. Nyakotyo",
year = "2016",
month = "6",
day = "1",
doi = "10.1016/j.ceramint.2016.03.110",
language = "English",
volume = "42",
pages = "10066--10070",
journal = "Ceramics International",
issn = "0272-8842",
publisher = "Elsevier Limited",
number = "8",

}

Effect of gallium doping on the structural, optical and electrical properties of zinc oxide thin films prepared by spray pyrolysis. / Muchuweni, E.; Sathiaraj, T. S.; Nyakotyo, H.

In: Ceramics International, Vol. 42, No. 8, 01.06.2016, p. 10066-10070.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of gallium doping on the structural, optical and electrical properties of zinc oxide thin films prepared by spray pyrolysis

AU - Muchuweni, E.

AU - Sathiaraj, T. S.

AU - Nyakotyo, H.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - Gallium-doped zinc oxide (GZO) thin films were deposited onto glass substrates by the spray pyrolysis technique and the effect of gallium (Ga) doping on their structural, optical and electrical properties was investigated by X-ray Diffraction (XRD), Spectrophotometry and Current-Voltage (I-V) measurements, respectively. XRD studies revealed that all films were polycrystalline in nature, with a hexagonal wurtzite crystal structure and a predominant (002) c-axis orientation. Ga doping resulted in deterioration of the film's crystallinity, increase in full width at half maximum (FWHM) and reduction in the mean crystallite sizes. All GZO thin films had relatively higher average transmittances, approximately 70-85% in the visible region as compared to the undoped ZnO thin films. Introduction of Ga led to a blue shift in the optical band gap from 3.26 eV to 3.30 eV and an increase in the Urbach energy from around 67 meV to 100 meV. Ga doping induced a decrease in sheet resistance leading to a minimum electrical resistivity of 1.2 ω cm and a maximum figure of merit of 1.02×10-4 Ω-1 for the 1 at% GZO thin film, indicating its suitability for optoelectronic applications, especially transparent electrode fabrication.

AB - Gallium-doped zinc oxide (GZO) thin films were deposited onto glass substrates by the spray pyrolysis technique and the effect of gallium (Ga) doping on their structural, optical and electrical properties was investigated by X-ray Diffraction (XRD), Spectrophotometry and Current-Voltage (I-V) measurements, respectively. XRD studies revealed that all films were polycrystalline in nature, with a hexagonal wurtzite crystal structure and a predominant (002) c-axis orientation. Ga doping resulted in deterioration of the film's crystallinity, increase in full width at half maximum (FWHM) and reduction in the mean crystallite sizes. All GZO thin films had relatively higher average transmittances, approximately 70-85% in the visible region as compared to the undoped ZnO thin films. Introduction of Ga led to a blue shift in the optical band gap from 3.26 eV to 3.30 eV and an increase in the Urbach energy from around 67 meV to 100 meV. Ga doping induced a decrease in sheet resistance leading to a minimum electrical resistivity of 1.2 ω cm and a maximum figure of merit of 1.02×10-4 Ω-1 for the 1 at% GZO thin film, indicating its suitability for optoelectronic applications, especially transparent electrode fabrication.

UR - http://www.scopus.com/inward/record.url?scp=84977950756&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84977950756&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2016.03.110

DO - 10.1016/j.ceramint.2016.03.110

M3 - Article

AN - SCOPUS:84977950756

VL - 42

SP - 10066

EP - 10070

JO - Ceramics International

JF - Ceramics International

SN - 0272-8842

IS - 8

ER -