Effect of Bi substitution on phase transformation studies for Ge 22Sb22Te56 thin films

J. Kumar, R. Thangaraj, T. Stephen Sathiaraj

Research output: Contribution to journalArticle

Abstract

The effect of Bi substitution on phase transformation in Ge 22Sb22Te56 (GST) chalcogenide system has been studied. Partial substitution of Bi upto 2 at% has been found to increase the phase transformation temperature of the GST. On further substitution of Bi (i. e. ∼4 and 6 at %) the films were found to exhibit increased room temperature conductivity. Optical study shows the partial decrease in bandgap for Ge22Sb20Bi2Te56 composition in comparison to pure GST. XRD investigation of annealed samples reveals that Bi substitution retains NaCl type crystalline structure of GST.

Original languageEnglish
Pages (from-to)1082-1085
Number of pages4
JournalJournal of Optoelectronics and Advanced Materials
Volume13
Issue number9
Publication statusPublished - Sep 1 2011

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phase transformations
Substitution reactions
Phase transitions
substitutes
Thin films
thin films
Energy gap
Crystalline materials
conductivity
Temperature
room temperature
Chemical analysis
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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Effect of Bi substitution on phase transformation studies for Ge 22Sb22Te56 thin films. / Kumar, J.; Thangaraj, R.; Sathiaraj, T. Stephen.

In: Journal of Optoelectronics and Advanced Materials, Vol. 13, No. 9, 01.09.2011, p. 1082-1085.

Research output: Contribution to journalArticle

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