Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Engineering & Materials Science

• Atomic layer deposition 100%
• Nanowires 80%
• Transistors 55%
• Contact resistance 37%
• Thin films 30%
• Temperature 26%
• Flexible electronics 22%
• Hall effect 22%
• Amorphous silicon 22%
• Drain current 20%
• Field effect transistors 17%
• Electronic equipment 13%

Chemical Compounds

• Atomic Layer Epitaxy 75%
• Field Effect 64%
• Nanowire 56%
• Compound Mobility 49%
• Contact Resistance 27%
• Drain Current 16%
• Hall Effect 15%
• Amorphous Silicon 14%
• Simulation 6%
• Liquid Film 5%
• Time 3%
• Application 3%

Physics & Astronomy

• atomic layer epitaxy 67%
• nanowires 52%
• transistors 52%
• performance 28%
• contact resistance 19%
• temperature 19%
• silicon transistors 12%
• electronics 9%
• thin films 9%
• amorphous silicon 8%
• Hall effect 8%
• field effect transistors 7%
• output 5%
• simulation 3%