Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Suhana M. Sultan, Nonofo J. Ditshego, Robert Gunn, Peter Ashburn, Harold M.H. Chong

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalNanoscale Research Letters
Volume9
Issue number1
DOIs
Publication statusPublished - Jan 1 2014

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Nanowires
Transistors
nanowires
transistors
Contact resistance
Flexible electronics
Thin films
Temperature
temperature
contact resistance
Drain current
Hall effect
Field effect transistors
Amorphous silicon
Electronic equipment
silicon transistors
thin films
electronics

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Sultan, Suhana M. ; Ditshego, Nonofo J. ; Gunn, Robert ; Ashburn, Peter ; Chong, Harold M.H. / Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors. In: Nanoscale Research Letters. 2014 ; Vol. 9, No. 1. pp. 1-7.
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Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors. / Sultan, Suhana M.; Ditshego, Nonofo J.; Gunn, Robert; Ashburn, Peter; Chong, Harold M.H.

In: Nanoscale Research Letters, Vol. 9, No. 1, 01.01.2014, p. 1-7.

Research output: Contribution to journalArticle

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