Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method

Charles Moditswe, Cosmas M. Muiva, Pearson Luhanga, Albert Juma

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    High quality transparent conducting CuI thin films were deposited at room temperature via thermal evaporation technique followed by post deposition annealing at different temperatures. The samples were characterised by X-ray diffraction (XRD), UV–Vis spectrophotometry, Scanning electron microscopy and I-V measurements. The structural, morphological and optical properties were studied as a function of the annealing temperature from room temperature (RT) to 200°C. XRD results revealed that the films were polycrystalline with zinc blende structure of cubic phase. Increasing the annealing temperature increased the crystallite size from 33 to 49nm whilst the dislocation density and lattice strain shifted to lower values. High transmittance of about 70–80% was exhibited by all films in the entire visible spectral range. The as deposited film possesed the lowest resistivity of 3.0×10−3Ωcm.
    Original languageEnglish
    Pages (from-to)5121-5126
    Number of pages6
    JournalCeramics International
    Volume43
    Issue number6
    DOIs
    Publication statusPublished - 2017

    Fingerprint

    Thermal evaporation
    Optoelectronic devices
    Annealing
    Thin films
    Temperature
    X ray diffraction
    Spectrophotometry
    Crystallite size
    Zinc
    Structural properties
    Optical properties
    Scanning electron microscopy

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Process Chemistry and Technology
    • Surfaces, Coatings and Films
    • Materials Chemistry

    Cite this

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    abstract = "High quality transparent conducting CuI thin films were deposited at room temperature via thermal evaporation technique followed by post deposition annealing at different temperatures. The samples were characterised by X-ray diffraction (XRD), UV–Vis spectrophotometry, Scanning electron microscopy and I-V measurements. The structural, morphological and optical properties were studied as a function of the annealing temperature from room temperature (RT) to 200°C. XRD results revealed that the films were polycrystalline with zinc blende structure of cubic phase. Increasing the annealing temperature increased the crystallite size from 33 to 49nm whilst the dislocation density and lattice strain shifted to lower values. High transmittance of about 70–80{\%} was exhibited by all films in the entire visible spectral range. The as deposited film possesed the lowest resistivity of 3.0×10−3Ωcm.",
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    Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method. / Moditswe, Charles; Muiva, Cosmas M.; Luhanga, Pearson; Juma, Albert.

    In: Ceramics International, Vol. 43, No. 6, 2017, p. 5121-5126.

    Research output: Contribution to journalArticle

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    AU - Moditswe, Charles

    AU - Muiva, Cosmas M.

    AU - Luhanga, Pearson

    AU - Juma, Albert

    PY - 2017

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    AB - High quality transparent conducting CuI thin films were deposited at room temperature via thermal evaporation technique followed by post deposition annealing at different temperatures. The samples were characterised by X-ray diffraction (XRD), UV–Vis spectrophotometry, Scanning electron microscopy and I-V measurements. The structural, morphological and optical properties were studied as a function of the annealing temperature from room temperature (RT) to 200°C. XRD results revealed that the films were polycrystalline with zinc blende structure of cubic phase. Increasing the annealing temperature increased the crystallite size from 33 to 49nm whilst the dislocation density and lattice strain shifted to lower values. High transmittance of about 70–80% was exhibited by all films in the entire visible spectral range. The as deposited film possesed the lowest resistivity of 3.0×10−3Ωcm.

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