Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method

Charles Moditswe, Cosmas M. Muiva, Pearson Luhanga, Albert Juma

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

High quality transparent conducting CuI thin films were deposited at room temperature via thermal evaporation technique followed by post deposition annealing at different temperatures. The samples were characterised by X-ray diffraction (XRD), UV–Vis spectrophotometry, Scanning electron microscopy and I-V measurements. The structural, morphological and optical properties were studied as a function of the annealing temperature from room temperature (RT) to 200°C. XRD results revealed that the films were polycrystalline with zinc blende structure of cubic phase. Increasing the annealing temperature increased the crystallite size from 33 to 49nm whilst the dislocation density and lattice strain shifted to lower values. High transmittance of about 70–80% was exhibited by all films in the entire visible spectral range. The as deposited film possesed the lowest resistivity of 3.0×10−3Ωcm.
Original languageEnglish
Pages (from-to)5121-5126
Number of pages6
JournalCeramics International
Volume43
Issue number6
DOIs
Publication statusPublished - 2017

Fingerprint

Thermal evaporation
Optoelectronic devices
Annealing
Thin films
Temperature
X ray diffraction
Spectrophotometry
Crystallite size
Zinc
Structural properties
Optical properties
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

@article{5b92c9c81aee47139fb159e430157626,
title = "Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method",
abstract = "High quality transparent conducting CuI thin films were deposited at room temperature via thermal evaporation technique followed by post deposition annealing at different temperatures. The samples were characterised by X-ray diffraction (XRD), UV–Vis spectrophotometry, Scanning electron microscopy and I-V measurements. The structural, morphological and optical properties were studied as a function of the annealing temperature from room temperature (RT) to 200°C. XRD results revealed that the films were polycrystalline with zinc blende structure of cubic phase. Increasing the annealing temperature increased the crystallite size from 33 to 49nm whilst the dislocation density and lattice strain shifted to lower values. High transmittance of about 70–80{\%} was exhibited by all films in the entire visible spectral range. The as deposited film possesed the lowest resistivity of 3.0×10−3Ωcm.",
author = "Charles Moditswe and Muiva, {Cosmas M.} and Pearson Luhanga and Albert Juma",
year = "2017",
doi = "10.1016/j.ceramint.2017.01.026",
language = "English",
volume = "43",
pages = "5121--5126",
journal = "Ceramics International",
issn = "0272-8842",
publisher = "Elsevier Limited",
number = "6",

}

Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method. / Moditswe, Charles; Muiva, Cosmas M.; Luhanga, Pearson; Juma, Albert.

In: Ceramics International, Vol. 43, No. 6, 2017, p. 5121-5126.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method

AU - Moditswe, Charles

AU - Muiva, Cosmas M.

AU - Luhanga, Pearson

AU - Juma, Albert

PY - 2017

Y1 - 2017

N2 - High quality transparent conducting CuI thin films were deposited at room temperature via thermal evaporation technique followed by post deposition annealing at different temperatures. The samples were characterised by X-ray diffraction (XRD), UV–Vis spectrophotometry, Scanning electron microscopy and I-V measurements. The structural, morphological and optical properties were studied as a function of the annealing temperature from room temperature (RT) to 200°C. XRD results revealed that the films were polycrystalline with zinc blende structure of cubic phase. Increasing the annealing temperature increased the crystallite size from 33 to 49nm whilst the dislocation density and lattice strain shifted to lower values. High transmittance of about 70–80% was exhibited by all films in the entire visible spectral range. The as deposited film possesed the lowest resistivity of 3.0×10−3Ωcm.

AB - High quality transparent conducting CuI thin films were deposited at room temperature via thermal evaporation technique followed by post deposition annealing at different temperatures. The samples were characterised by X-ray diffraction (XRD), UV–Vis spectrophotometry, Scanning electron microscopy and I-V measurements. The structural, morphological and optical properties were studied as a function of the annealing temperature from room temperature (RT) to 200°C. XRD results revealed that the films were polycrystalline with zinc blende structure of cubic phase. Increasing the annealing temperature increased the crystallite size from 33 to 49nm whilst the dislocation density and lattice strain shifted to lower values. High transmittance of about 70–80% was exhibited by all films in the entire visible spectral range. The as deposited film possesed the lowest resistivity of 3.0×10−3Ωcm.

UR - http://www.scopus.com/inward/record.url?scp=85009209235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85009209235&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2017.01.026

DO - 10.1016/j.ceramint.2017.01.026

M3 - Article

AN - SCOPUS:85009209235

VL - 43

SP - 5121

EP - 5126

JO - Ceramics International

JF - Ceramics International

SN - 0272-8842

IS - 6

ER -