Effect of annealing on the optical properties of amorphous Se79Te10Sb4Bi7 thin films

H. Nyakotyo, T. S. Sathiaraj, E. Muchuweni

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Thin films of Se79Te10Sb4Bi7, were prepared by Electron beam deposition technique. The structure of the as-prepared and annealed films has been studied by X-ray diffraction and the surface morphology by the scanning electron microscope (SEM). These studies show that there is a gradual change in structure and the formation of some polycrystalline structures in the amorphous phases is observed when the Se79Te10Sb4Bi7 film is annealed in the temperature range of 333–393 K. The optical transmission of these films has been studied as a function of photon wavelength in the range 300–2500 nm. It has been found that the optical band gap Egopt decreased with increasing annealing temperature in the range 333–393 K. The Urbach energy (Eu), optical conductivity (σopt), imaginary (εi), and real (εr) parts of the complex dielectric constant (ε) and lattice dielectric constant (εL) were also determined. The changes noticed in optical parameters with increasing annealing temperature were explained on the basis of structural relaxation as well as change in defect states and density of localized states due to amorphous-crystalline transformation.

Original languageEnglish
Pages (from-to)182-188
Number of pages7
JournalOptics and Laser Technology
Volume92
DOIs
Publication statusPublished - Jul 1 2017

Fingerprint

Amorphous films
Optical properties
Annealing
optical properties
Thin films
annealing
Permittivity
thin films
permittivity
Optical conductivity
Structural relaxation
Amorphization
Optical band gaps
Light transmission
Temperature
Surface morphology
temperature
Electron beams
Electron microscopes
Photons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Thin films of Se79Te10Sb4Bi7, were prepared by Electron beam deposition technique. The structure of the as-prepared and annealed films has been studied by X-ray diffraction and the surface morphology by the scanning electron microscope (SEM). These studies show that there is a gradual change in structure and the formation of some polycrystalline structures in the amorphous phases is observed when the Se79Te10Sb4Bi7 film is annealed in the temperature range of 333–393 K. The optical transmission of these films has been studied as a function of photon wavelength in the range 300–2500 nm. It has been found that the optical band gap Egopt decreased with increasing annealing temperature in the range 333–393 K. The Urbach energy (Eu), optical conductivity (σopt), imaginary (εi), and real (εr) parts of the complex dielectric constant (ε) and lattice dielectric constant (εL) were also determined. The changes noticed in optical parameters with increasing annealing temperature were explained on the basis of structural relaxation as well as change in defect states and density of localized states due to amorphous-crystalline transformation.",
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Effect of annealing on the optical properties of amorphous Se79Te10Sb4Bi7 thin films. / Nyakotyo, H.; Sathiaraj, T. S.; Muchuweni, E.

In: Optics and Laser Technology, Vol. 92, 01.07.2017, p. 182-188.

Research output: Contribution to journalArticle

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AB - Thin films of Se79Te10Sb4Bi7, were prepared by Electron beam deposition technique. The structure of the as-prepared and annealed films has been studied by X-ray diffraction and the surface morphology by the scanning electron microscope (SEM). These studies show that there is a gradual change in structure and the formation of some polycrystalline structures in the amorphous phases is observed when the Se79Te10Sb4Bi7 film is annealed in the temperature range of 333–393 K. The optical transmission of these films has been studied as a function of photon wavelength in the range 300–2500 nm. It has been found that the optical band gap Egopt decreased with increasing annealing temperature in the range 333–393 K. The Urbach energy (Eu), optical conductivity (σopt), imaginary (εi), and real (εr) parts of the complex dielectric constant (ε) and lattice dielectric constant (εL) were also determined. The changes noticed in optical parameters with increasing annealing temperature were explained on the basis of structural relaxation as well as change in defect states and density of localized states due to amorphous-crystalline transformation.

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