Effect of Ag photo-doping on structural, optical and phase change properties of GeTe chalcogenide films

Praveen Kumar, R. Chander, T. S. Sathiaraj, R. Thangaraj

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This paper reports the effect of Ag photo-doping on optical, electrical and structural properties of GeTe:Ag thin films. The absence of sharp diffraction peak confirms the amorphous nature of as-deposited and photo-doped films. The decrease in reflectance of GeTe:Ag bilayer films with photo-doping reaction time has been observed. The RAMAN spectrum showed the characteristic Raman bands for GeTe4 (127 cm-1), long chain interactions of Te-Te chains (145 cm-1) and a broad peak for Ge-Ge vibrations (275 cm-1) without appreciable change in their position/shape with photodoped Ag concentration. The electrical resistivity measurement shows that photo-doping of Ag led to sharp amorphous-crystalline phase transition along with an increase in transition temperature and resistivity value in both amorphous as well as crystalline state. The annealing of photo-doped GeTe:Ag samples showed an enhancement in the crystallinity of GeTe phase without any segregation of Ag phases in annealed samples. The preferential formation of GeTe (200) phase upon crystallization has been observed for GeTe:Ag films. Different optical parameters have been calculated for photo-doped and annealed samples and are discussed in conjunction with the modification of network structure of GeTe with inclusion of photo-doped Ag content.

Original languageEnglish
Pages (from-to)188-191
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume38
DOIs
Publication statusPublished - Oct 1 2015

Fingerprint

Doping (additives)
Crystalline materials
electrical resistivity
Crystallization
reaction time
Superconducting transition temperature
Structural properties
crystallinity
Electric properties
Optical properties
Diffraction
Phase transitions
transition temperature
electrical properties
inclusions
Annealing
crystallization
reflectance
optical properties
Thin films

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{7e4af55e35794fc3b77e768a1f121f18,
title = "Effect of Ag photo-doping on structural, optical and phase change properties of GeTe chalcogenide films",
abstract = "This paper reports the effect of Ag photo-doping on optical, electrical and structural properties of GeTe:Ag thin films. The absence of sharp diffraction peak confirms the amorphous nature of as-deposited and photo-doped films. The decrease in reflectance of GeTe:Ag bilayer films with photo-doping reaction time has been observed. The RAMAN spectrum showed the characteristic Raman bands for GeTe4 (127 cm-1), long chain interactions of Te-Te chains (145 cm-1) and a broad peak for Ge-Ge vibrations (275 cm-1) without appreciable change in their position/shape with photodoped Ag concentration. The electrical resistivity measurement shows that photo-doping of Ag led to sharp amorphous-crystalline phase transition along with an increase in transition temperature and resistivity value in both amorphous as well as crystalline state. The annealing of photo-doped GeTe:Ag samples showed an enhancement in the crystallinity of GeTe phase without any segregation of Ag phases in annealed samples. The preferential formation of GeTe (200) phase upon crystallization has been observed for GeTe:Ag films. Different optical parameters have been calculated for photo-doped and annealed samples and are discussed in conjunction with the modification of network structure of GeTe with inclusion of photo-doped Ag content.",
author = "Praveen Kumar and R. Chander and Sathiaraj, {T. S.} and R. Thangaraj",
year = "2015",
month = "10",
day = "1",
doi = "10.1016/j.mssp.2015.04.027",
language = "English",
volume = "38",
pages = "188--191",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",

}

Effect of Ag photo-doping on structural, optical and phase change properties of GeTe chalcogenide films. / Kumar, Praveen; Chander, R.; Sathiaraj, T. S.; Thangaraj, R.

In: Materials Science in Semiconductor Processing, Vol. 38, 01.10.2015, p. 188-191.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of Ag photo-doping on structural, optical and phase change properties of GeTe chalcogenide films

AU - Kumar, Praveen

AU - Chander, R.

AU - Sathiaraj, T. S.

AU - Thangaraj, R.

PY - 2015/10/1

Y1 - 2015/10/1

N2 - This paper reports the effect of Ag photo-doping on optical, electrical and structural properties of GeTe:Ag thin films. The absence of sharp diffraction peak confirms the amorphous nature of as-deposited and photo-doped films. The decrease in reflectance of GeTe:Ag bilayer films with photo-doping reaction time has been observed. The RAMAN spectrum showed the characteristic Raman bands for GeTe4 (127 cm-1), long chain interactions of Te-Te chains (145 cm-1) and a broad peak for Ge-Ge vibrations (275 cm-1) without appreciable change in their position/shape with photodoped Ag concentration. The electrical resistivity measurement shows that photo-doping of Ag led to sharp amorphous-crystalline phase transition along with an increase in transition temperature and resistivity value in both amorphous as well as crystalline state. The annealing of photo-doped GeTe:Ag samples showed an enhancement in the crystallinity of GeTe phase without any segregation of Ag phases in annealed samples. The preferential formation of GeTe (200) phase upon crystallization has been observed for GeTe:Ag films. Different optical parameters have been calculated for photo-doped and annealed samples and are discussed in conjunction with the modification of network structure of GeTe with inclusion of photo-doped Ag content.

AB - This paper reports the effect of Ag photo-doping on optical, electrical and structural properties of GeTe:Ag thin films. The absence of sharp diffraction peak confirms the amorphous nature of as-deposited and photo-doped films. The decrease in reflectance of GeTe:Ag bilayer films with photo-doping reaction time has been observed. The RAMAN spectrum showed the characteristic Raman bands for GeTe4 (127 cm-1), long chain interactions of Te-Te chains (145 cm-1) and a broad peak for Ge-Ge vibrations (275 cm-1) without appreciable change in their position/shape with photodoped Ag concentration. The electrical resistivity measurement shows that photo-doping of Ag led to sharp amorphous-crystalline phase transition along with an increase in transition temperature and resistivity value in both amorphous as well as crystalline state. The annealing of photo-doped GeTe:Ag samples showed an enhancement in the crystallinity of GeTe phase without any segregation of Ag phases in annealed samples. The preferential formation of GeTe (200) phase upon crystallization has been observed for GeTe:Ag films. Different optical parameters have been calculated for photo-doped and annealed samples and are discussed in conjunction with the modification of network structure of GeTe with inclusion of photo-doped Ag content.

UR - http://www.scopus.com/inward/record.url?scp=84928897296&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928897296&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2015.04.027

DO - 10.1016/j.mssp.2015.04.027

M3 - Article

AN - SCOPUS:84928897296

VL - 38

SP - 188

EP - 191

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -