Copper diffusion in thin In 2S 3 layers investigated by Rutherford backscattering spectroscopy

Albert O. Juma, Paul Pistor, Steffen Fengler, Thomas Dittrich, Elke Wendler

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    Copper diffusion in thin In 2S 3 layers was investigated by measuring copper concentration profiles with Rutherford Backscattering Spectroscopy (RBS). For this purpose In 2S 3 layers (thickness 100 nm) were evaporated on crystalline silicon substrates and Cu was diffused from a CuSCN surface layer at temperatures between 150 and 250°C. The CuSCN source layer was removed in pyridine solution before RBS measurements were performed. Diffusion coefficients of Cu in In 2S 3 were obtained by simulating the diffusion process in a one-dimensional model and comparing measured and simulated Cu concentration profiles. The values of the exponential prefactor of the diffusion coefficient and of the activation energy were 9 × 10 - 11 cm 2/s and 0.3 eV, respectively.

    Original languageEnglish
    Pages (from-to)6740-6743
    Number of pages4
    JournalThin Solid Films
    Volume520
    Issue number22
    DOIs
    Publication statusPublished - Sep 1 2012

    Fingerprint

    Rutherford backscattering spectroscopy
    Copper
    backscattering
    copper
    diffusion coefficient
    spectroscopy
    profiles
    pyridines
    surface layers
    Silicon
    Pyridine
    activation energy
    Activation energy
    silicon
    Crystalline materials
    Substrates
    temperature
    Temperature
    cuprous thiocyanate

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Metals and Alloys
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Juma, Albert O. ; Pistor, Paul ; Fengler, Steffen ; Dittrich, Thomas ; Wendler, Elke. / Copper diffusion in thin In 2S 3 layers investigated by Rutherford backscattering spectroscopy. In: Thin Solid Films. 2012 ; Vol. 520, No. 22. pp. 6740-6743.
    @article{94b45c12fffb4aa6b1f4a86be5ae87f4,
    title = "Copper diffusion in thin In 2S 3 layers investigated by Rutherford backscattering spectroscopy",
    abstract = "Copper diffusion in thin In 2S 3 layers was investigated by measuring copper concentration profiles with Rutherford Backscattering Spectroscopy (RBS). For this purpose In 2S 3 layers (thickness 100 nm) were evaporated on crystalline silicon substrates and Cu was diffused from a CuSCN surface layer at temperatures between 150 and 250°C. The CuSCN source layer was removed in pyridine solution before RBS measurements were performed. Diffusion coefficients of Cu in In 2S 3 were obtained by simulating the diffusion process in a one-dimensional model and comparing measured and simulated Cu concentration profiles. The values of the exponential prefactor of the diffusion coefficient and of the activation energy were 9 × 10 - 11 cm 2/s and 0.3 eV, respectively.",
    author = "Juma, {Albert O.} and Paul Pistor and Steffen Fengler and Thomas Dittrich and Elke Wendler",
    year = "2012",
    month = "9",
    day = "1",
    doi = "10.1016/j.tsf.2012.07.042",
    language = "English",
    volume = "520",
    pages = "6740--6743",
    journal = "Thin Solid Films",
    issn = "0040-6090",
    publisher = "Elsevier",
    number = "22",

    }

    Copper diffusion in thin In 2S 3 layers investigated by Rutherford backscattering spectroscopy. / Juma, Albert O.; Pistor, Paul; Fengler, Steffen; Dittrich, Thomas; Wendler, Elke.

    In: Thin Solid Films, Vol. 520, No. 22, 01.09.2012, p. 6740-6743.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Copper diffusion in thin In 2S 3 layers investigated by Rutherford backscattering spectroscopy

    AU - Juma, Albert O.

    AU - Pistor, Paul

    AU - Fengler, Steffen

    AU - Dittrich, Thomas

    AU - Wendler, Elke

    PY - 2012/9/1

    Y1 - 2012/9/1

    N2 - Copper diffusion in thin In 2S 3 layers was investigated by measuring copper concentration profiles with Rutherford Backscattering Spectroscopy (RBS). For this purpose In 2S 3 layers (thickness 100 nm) were evaporated on crystalline silicon substrates and Cu was diffused from a CuSCN surface layer at temperatures between 150 and 250°C. The CuSCN source layer was removed in pyridine solution before RBS measurements were performed. Diffusion coefficients of Cu in In 2S 3 were obtained by simulating the diffusion process in a one-dimensional model and comparing measured and simulated Cu concentration profiles. The values of the exponential prefactor of the diffusion coefficient and of the activation energy were 9 × 10 - 11 cm 2/s and 0.3 eV, respectively.

    AB - Copper diffusion in thin In 2S 3 layers was investigated by measuring copper concentration profiles with Rutherford Backscattering Spectroscopy (RBS). For this purpose In 2S 3 layers (thickness 100 nm) were evaporated on crystalline silicon substrates and Cu was diffused from a CuSCN surface layer at temperatures between 150 and 250°C. The CuSCN source layer was removed in pyridine solution before RBS measurements were performed. Diffusion coefficients of Cu in In 2S 3 were obtained by simulating the diffusion process in a one-dimensional model and comparing measured and simulated Cu concentration profiles. The values of the exponential prefactor of the diffusion coefficient and of the activation energy were 9 × 10 - 11 cm 2/s and 0.3 eV, respectively.

    UR - http://www.scopus.com/inward/record.url?scp=84864647313&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84864647313&partnerID=8YFLogxK

    U2 - 10.1016/j.tsf.2012.07.042

    DO - 10.1016/j.tsf.2012.07.042

    M3 - Article

    VL - 520

    SP - 6740

    EP - 6743

    JO - Thin Solid Films

    JF - Thin Solid Films

    SN - 0040-6090

    IS - 22

    ER -