Copper diffusion in thin In 2S 3 layers investigated by Rutherford backscattering spectroscopy

Albert O. Juma, Paul Pistor, Steffen Fengler, Thomas Dittrich, Elke Wendler

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Copper diffusion in thin In 2S 3 layers was investigated by measuring copper concentration profiles with Rutherford Backscattering Spectroscopy (RBS). For this purpose In 2S 3 layers (thickness 100 nm) were evaporated on crystalline silicon substrates and Cu was diffused from a CuSCN surface layer at temperatures between 150 and 250°C. The CuSCN source layer was removed in pyridine solution before RBS measurements were performed. Diffusion coefficients of Cu in In 2S 3 were obtained by simulating the diffusion process in a one-dimensional model and comparing measured and simulated Cu concentration profiles. The values of the exponential prefactor of the diffusion coefficient and of the activation energy were 9 × 10 - 11 cm 2/s and 0.3 eV, respectively.

Original languageEnglish
Pages (from-to)6740-6743
Number of pages4
JournalThin Solid Films
Issue number22
Publication statusPublished - Sep 1 2012


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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