Copper diffusion in thin In 2S 3 layers investigated by Rutherford backscattering spectroscopy

Albert O. Juma, Paul Pistor, Steffen Fengler, Thomas Dittrich, Elke Wendler

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Copper diffusion in thin In 2S 3 layers was investigated by measuring copper concentration profiles with Rutherford Backscattering Spectroscopy (RBS). For this purpose In 2S 3 layers (thickness 100 nm) were evaporated on crystalline silicon substrates and Cu was diffused from a CuSCN surface layer at temperatures between 150 and 250°C. The CuSCN source layer was removed in pyridine solution before RBS measurements were performed. Diffusion coefficients of Cu in In 2S 3 were obtained by simulating the diffusion process in a one-dimensional model and comparing measured and simulated Cu concentration profiles. The values of the exponential prefactor of the diffusion coefficient and of the activation energy were 9 × 10 - 11 cm 2/s and 0.3 eV, respectively.

Original languageEnglish
Pages (from-to)6740-6743
Number of pages4
JournalThin Solid Films
Volume520
Issue number22
DOIs
Publication statusPublished - Sep 1 2012

Fingerprint

Rutherford backscattering spectroscopy
Copper
backscattering
copper
diffusion coefficient
spectroscopy
profiles
pyridines
surface layers
Silicon
Pyridine
activation energy
Activation energy
silicon
Crystalline materials
Substrates
temperature
Temperature
cuprous thiocyanate

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Juma, Albert O. ; Pistor, Paul ; Fengler, Steffen ; Dittrich, Thomas ; Wendler, Elke. / Copper diffusion in thin In 2S 3 layers investigated by Rutherford backscattering spectroscopy. In: Thin Solid Films. 2012 ; Vol. 520, No. 22. pp. 6740-6743.
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Copper diffusion in thin In 2S 3 layers investigated by Rutherford backscattering spectroscopy. / Juma, Albert O.; Pistor, Paul; Fengler, Steffen; Dittrich, Thomas; Wendler, Elke.

In: Thin Solid Films, Vol. 520, No. 22, 01.09.2012, p. 6740-6743.

Research output: Contribution to journalArticle

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AB - Copper diffusion in thin In 2S 3 layers was investigated by measuring copper concentration profiles with Rutherford Backscattering Spectroscopy (RBS). For this purpose In 2S 3 layers (thickness 100 nm) were evaporated on crystalline silicon substrates and Cu was diffused from a CuSCN surface layer at temperatures between 150 and 250°C. The CuSCN source layer was removed in pyridine solution before RBS measurements were performed. Diffusion coefficients of Cu in In 2S 3 were obtained by simulating the diffusion process in a one-dimensional model and comparing measured and simulated Cu concentration profiles. The values of the exponential prefactor of the diffusion coefficient and of the activation energy were 9 × 10 - 11 cm 2/s and 0.3 eV, respectively.

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