Characterization of thermally annealed diamond like carbon (DLC) and silicon modified DLC films by Raman spectroscopy

A. A. Ogwu, R. W. Lamberton, S. Morley, P. Maguire, J. McLaughlin

Research output: Contribution to journalArticlepeer-review

94 Citations (Scopus)

Abstract

Raman spectroscopy has been used to investigate the structural changes in thermally annealed diamond like carbon (a-C:H) and silicon modified diamond like carbon (a-C:H:Si) films prepared by plasma enhanced chemical vapour deposition (PECVD) using a 514.53 nm argon ion laser excitation. The changes in the Raman spectra of the films has been used to monitor structural modifications with increasing annealing temperature. The present investigation indicates that the rate of these structural modifications is dependent on both the annealing temperature and the negative self-bias voltage applied during the film deposition process for a fixed annealing time.

Original languageEnglish
Pages (from-to)335-344
Number of pages10
JournalPhysica B: Condensed Matter
Volume269
Issue number3-4
DOIs
Publication statusPublished - Sep 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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