Characterization of metal-overlayer growth-modes in Auger crystal surface analysis

Jens E.T. Andersen, Preben J. Møller

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A general procedure for Auger-analysis characterization of the modes of growth during deposition of metal thin films onto layer-structured crystalline substrates is presented. It takes into account the crystallographic electron attenuation in both the overlayer structures and in the substrate layers, and it is found that the maximum Auger electronic escape-depth has a minimum at monolayer coverage. The model, which is based on ratios between electronic attenuation lengths, or between electronic inelastic mean free paths, is tested on thin-film growth of yttrium on MgO(100) and of yttrium and copper, respectively, on LaAlO3(100); its predictions on the modes of growth are confirmed, and it is further indicated that the degree of charge distribution and the change in bond lengths in the interface region may decrease with yttrium coverage.

Original languageEnglish
Pages (from-to)247-258
Number of pages12
JournalSurface Science
Volume258
Issue number1-3
DOIs
Publication statusPublished - Nov 2 1991

Fingerprint

Yttrium
Surface analysis
yttrium
crystal surfaces
Metals
Crystals
attenuation
electronics
metals
Thin films
Charge distribution
Bond length
Film growth
Substrates
thin films
mean free path
charge distribution
escape
Copper
Monolayers

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

@article{400a00fe770b40a98ea6b62669d66b7b,
title = "Characterization of metal-overlayer growth-modes in Auger crystal surface analysis",
abstract = "A general procedure for Auger-analysis characterization of the modes of growth during deposition of metal thin films onto layer-structured crystalline substrates is presented. It takes into account the crystallographic electron attenuation in both the overlayer structures and in the substrate layers, and it is found that the maximum Auger electronic escape-depth has a minimum at monolayer coverage. The model, which is based on ratios between electronic attenuation lengths, or between electronic inelastic mean free paths, is tested on thin-film growth of yttrium on MgO(100) and of yttrium and copper, respectively, on LaAlO3(100); its predictions on the modes of growth are confirmed, and it is further indicated that the degree of charge distribution and the change in bond lengths in the interface region may decrease with yttrium coverage.",
author = "Andersen, {Jens E.T.} and M{\o}ller, {Preben J.}",
year = "1991",
month = "11",
day = "2",
doi = "10.1016/0039-6028(91)90919-J",
language = "English",
volume = "258",
pages = "247--258",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-3",

}

Characterization of metal-overlayer growth-modes in Auger crystal surface analysis. / Andersen, Jens E.T.; Møller, Preben J.

In: Surface Science, Vol. 258, No. 1-3, 02.11.1991, p. 247-258.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characterization of metal-overlayer growth-modes in Auger crystal surface analysis

AU - Andersen, Jens E.T.

AU - Møller, Preben J.

PY - 1991/11/2

Y1 - 1991/11/2

N2 - A general procedure for Auger-analysis characterization of the modes of growth during deposition of metal thin films onto layer-structured crystalline substrates is presented. It takes into account the crystallographic electron attenuation in both the overlayer structures and in the substrate layers, and it is found that the maximum Auger electronic escape-depth has a minimum at monolayer coverage. The model, which is based on ratios between electronic attenuation lengths, or between electronic inelastic mean free paths, is tested on thin-film growth of yttrium on MgO(100) and of yttrium and copper, respectively, on LaAlO3(100); its predictions on the modes of growth are confirmed, and it is further indicated that the degree of charge distribution and the change in bond lengths in the interface region may decrease with yttrium coverage.

AB - A general procedure for Auger-analysis characterization of the modes of growth during deposition of metal thin films onto layer-structured crystalline substrates is presented. It takes into account the crystallographic electron attenuation in both the overlayer structures and in the substrate layers, and it is found that the maximum Auger electronic escape-depth has a minimum at monolayer coverage. The model, which is based on ratios between electronic attenuation lengths, or between electronic inelastic mean free paths, is tested on thin-film growth of yttrium on MgO(100) and of yttrium and copper, respectively, on LaAlO3(100); its predictions on the modes of growth are confirmed, and it is further indicated that the degree of charge distribution and the change in bond lengths in the interface region may decrease with yttrium coverage.

UR - http://www.scopus.com/inward/record.url?scp=0026414383&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026414383&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(91)90919-J

DO - 10.1016/0039-6028(91)90919-J

M3 - Article

AN - SCOPUS:0026414383

VL - 258

SP - 247

EP - 258

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -