3D Simulation Investigating ZnO NWFET Characteristics

Nonofo Ditshego; Suhana M. Sultan

doi:10.4028/www.scientific.net/JNanoR.58.40

3D Simulation Investigating ZnO NWFET Characteristics

Nonofo Ditshego, Suhana M. Sultan

Electrical, Computer & Telecommunications Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 1015 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm2/Vs.

Original language	English
Pages (from-to)	40-48
Number of pages	9
Journal	Journal of Nano Research
Volume	58
DOIs	https://doi.org/10.4028/www.scientific.net/JNanoR.58.40
Publication status	Published - Jun 2019

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title = "3D Simulation Investigating ZnO NWFET Characteristics",

abstract = "3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 1015 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm2/Vs.",

author = "Nonofo Ditshego and Sultan, {Suhana M.}",

year = "2019",

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doi = "10.4028/www.scientific.net/JNanoR.58.40",

language = "English",

volume = "58",

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T1 - 3D Simulation Investigating ZnO NWFET Characteristics

AU - Ditshego, Nonofo

AU - Sultan, Suhana M.

PY - 2019/6

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AB - 3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 1015 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm2/Vs.

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