Abstract
3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 1015 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm2/Vs.
| Original language | English |
|---|---|
| Pages (from-to) | 40-48 |
| Number of pages | 9 |
| Journal | Journal of Nano Research |
| Volume | 58 |
| DOIs | |
| Publication status | Published - Jun 2019 |
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3D Simulation Investigating ZnO NWFET Characteristics. / Ditshego, Nonofo; Sultan, Suhana M.
In: Journal of Nano Research, Vol. 58, 06.2019, p. 40-48.Research output: Contribution to journal › Article
TY - JOUR
T1 - 3D Simulation Investigating ZnO NWFET Characteristics
AU - Ditshego, Nonofo
AU - Sultan, Suhana M.
PY - 2019/6
Y1 - 2019/6
N2 - 3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 1015 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm2/Vs.
AB - 3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 1015 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm2/Vs.
U2 - 10.4028/www.scientific.net/JNanoR.58.40
DO - 10.4028/www.scientific.net/JNanoR.58.40
M3 - Article
VL - 58
SP - 40
EP - 48
JO - Journal of Nano Research
JF - Journal of Nano Research
SN - 1662-5250
ER -