3D Simulation Investigating ZnO NWFET Characteristics

Nonofo Ditshego, Suhana M. Sultan

Research output: Contribution to journalArticle

Abstract


3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 1015 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm2/Vs.
Original languageEnglish
Pages (from-to)40-48
Number of pages9
JournalJournal of Nano Research
Volume58
DOIs
Publication statusPublished - Jun 2019

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Contact resistance
contact resistance
Interface states
Gaussian distribution
Threshold voltage
simulation
output
normal density functions
threshold voltage
embedding
Electric potential
slopes
electric potential

Cite this

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3D Simulation Investigating ZnO NWFET Characteristics. / Ditshego, Nonofo; Sultan, Suhana M.

In: Journal of Nano Research, Vol. 58, 06.2019, p. 40-48.

Research output: Contribution to journalArticle

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AB - 3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm2/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 1015 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm2/Vs.

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